发明授权
US08513133B2 Composition for forming resist underlayer film and method for forming pattern
有权
用于形成抗蚀剂下层膜的组合物和形成图案的方法
- 专利标题: Composition for forming resist underlayer film and method for forming pattern
- 专利标题(中): 用于形成抗蚀剂下层膜的组合物和形成图案的方法
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申请号: US13221853申请日: 2011-08-30
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公开(公告)号: US08513133B2公开(公告)日: 2013-08-20
- 发明人: Shin-ya Minegishi , Yushi Matsumura , Shinya Nakafuji , Kazuhiko Komura , Takanori Nakano , Satoru Murakami , Kyoyu Yasuda , Makoto Sugiura
- 申请人: Shin-ya Minegishi , Yushi Matsumura , Shinya Nakafuji , Kazuhiko Komura , Takanori Nakano , Satoru Murakami , Kyoyu Yasuda , Makoto Sugiura
- 申请人地址: JP Tokyo
- 专利权人: JSR Corporation
- 当前专利权人: JSR Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Ditthavong Mori & Steiner, P.C.
- 优先权: JP2011-081332 20110331
- 主分类号: H01L21/311
- IPC分类号: H01L21/311
摘要:
A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein R3 to R8 individually represent a group shown by the following formula (2) or the like, —O—R1≡R2 (2) wherein R1 represents a single bond or the like, and R2 represents a hydrogen atom or the like.