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1.发明授权公开(公告)号：US09029069B2
公开(公告)日：2015-05-12
申请号：US13434781
申请日：2012-03-29
申请人： Shin-ya Minegishi , Yushi Matsumura , Shinya Nakafuji , Kazuhiko Komura , Takanori Nakano , Satoru Murakami , Kyoyu Yasuda , Makoto Sugiura
发明人： Shin-ya Minegishi , Yushi Matsumura , Shinya Nakafuji , Kazuhiko Komura , Takanori Nakano , Satoru Murakami , Kyoyu Yasuda , Makoto Sugiura
CPC分类号： G03F7/09
摘要： A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of R3 to R8 independently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of R3 to R8 represents the group shown by the formula (2).
摘要翻译： 抗蚀剂下层膜形成组合物包括含有式（1）所示的结构单元，聚苯乙烯换算的重均分子量为3000〜10000的聚合物和溶剂。 R 3〜R 8各自独立地表示由式（2）表示的基团，氢原子，羟基，碳原子数1〜6的烷基，碳原子数1〜6的烷氧基，烷氧基羰基2 至10个碳原子，具有6至14个碳原子的芳基或具有3至6个碳原子的缩水甘油醚基团，其中R3至R8中的至少一个表示式（2）所示的基团。
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2.发明申请公开(公告)号：US20120270157A1
公开(公告)日：2012-10-25
申请号：US13434781
申请日：2012-03-29
申请人： Shin-ya Minegishi , Yushi Matsumura , Shinya Nakafuji , Kazuhiko Komura , Takanori Nakano , Satoru Murakami , Kyoyu Yasuda , Makoto Sugiura
发明人： Shin-ya Minegishi , Yushi Matsumura , Shinya Nakafuji , Kazuhiko Komura , Takanori Nakano , Satoru Murakami , Kyoyu Yasuda , Makoto Sugiura
CPC分类号： G03F7/09
摘要： A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of R3 to R8 independently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of R3 to R8 represents the group shown by the formula (2).
摘要翻译： 抗蚀剂下层膜形成组合物包括含有式（1）所示的结构单元，聚苯乙烯换算的重均分子量为3000〜10000的聚合物和溶剂。 R 3〜R 8各自独立地表示由式（2）表示的基团，氢原子，羟基，碳原子数1〜6的烷基，碳原子数1〜6的烷氧基，烷氧基羰基2 至10个碳原子，具有6至14个碳原子的芳基或具有3至6个碳原子的缩水甘油醚基团，其中R3至R8中的至少一个表示式（2）所示的基团。
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3.发明授权Composition for forming resist underlayer film and method for forming pattern 有权用于形成抗蚀剂下层膜的组合物和形成图案的方法公开(公告)号：US08513133B2
公开(公告)日：2013-08-20
申请号：US13221853
申请日：2011-08-30
申请人： Shin-ya Minegishi , Yushi Matsumura , Shinya Nakafuji , Kazuhiko Komura , Takanori Nakano , Satoru Murakami , Kyoyu Yasuda , Makoto Sugiura
发明人： Shin-ya Minegishi , Yushi Matsumura , Shinya Nakafuji , Kazuhiko Komura , Takanori Nakano , Satoru Murakami , Kyoyu Yasuda , Makoto Sugiura
IPC分类号： H01L21/311
摘要： A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein R3 to R8 individually represent a group shown by the following formula (2) or the like, —O—R1≡R2 (2) wherein R1 represents a single bond or the like, and R2 represents a hydrogen atom or the like.
摘要翻译： 抗蚀剂下层膜形成用组合物包括（A）包含式（1）所示的重复单元，聚苯乙烯换算的重均分子量为3000〜10000的聚合物，（B）溶剂，其中， R 8分别表示下述式（2）所示的基团等，-O-R 1 = R 2（2）其中，R 1表示单键等，R 2表示氢原子等。
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4.发明授权公开(公告)号：US08859191B2
公开(公告)日：2014-10-14
申请号：US13466126
申请日：2012-05-08
申请人： Yushi Matsumura , Shinya Minegishi , Satoru Murakami , Yusuke Anno , Shinya Nakafuji , Kazuhiko Komura , Kyoyu Yasuda
发明人： Yushi Matsumura , Shinya Minegishi , Satoru Murakami , Yusuke Anno , Shinya Nakafuji , Kazuhiko Komura , Kyoyu Yasuda
IPC分类号： G03F7/26 , C07D487/04 , C07D407/12 , H05K1/00 , B44C1/22
CPC分类号： G03F7/027 , B44C1/22 , C07D407/12 , C07D487/04 , G03F7/004 , G03F7/11 , H05K1/00
摘要： Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.
摘要翻译： 提供一种能够形成能够形成抗蚀剂下层膜的图案的方法，该方法能够在保持耐蚀刻性的同时使用碱液容易地除去。 本发明提供一种形成图案的方法，该方法包括：（1）使用含有具有可碱解官能团的化合物的形成抗蚀剂下层膜的组合物在基材上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜上形成抗蚀剂图案; （3）使用抗蚀剂图案作为掩模，通过干蚀刻抗蚀剂下层膜和基板在基板上形成图案; 和（4）用碱液除去抗蚀剂下层膜。
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5.发明申请公开(公告)号：US20120285929A1
公开(公告)日：2012-11-15
申请号：US13466126
申请日：2012-05-08
申请人： Yushi MATSUMURA , Shinya Minegishi , Satoru Murakami , Yusuke Anno , Shinya Nakafuji , Kazuhiko Komura , Kyoyu Yasuda
发明人： Yushi MATSUMURA , Shinya Minegishi , Satoru Murakami , Yusuke Anno , Shinya Nakafuji , Kazuhiko Komura , Kyoyu Yasuda
IPC分类号： B44C1/22 , C07D487/04 , C07D407/12
CPC分类号： G03F7/027 , B44C1/22 , C07D407/12 , C07D487/04 , G03F7/004 , G03F7/11 , H05K1/00
摘要： Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.
摘要翻译： 提供一种能够形成能够形成抗蚀剂下层膜的图案的方法，该方法能够在保持耐蚀刻性的同时使用碱液容易地除去。 本发明提供一种形成图案的方法，该方法包括：（1）使用含有具有可碱解官能团的化合物的形成抗蚀剂下层膜的组合物在基材上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜上形成抗蚀剂图案; （3）使用抗蚀剂图案作为掩模，通过干蚀刻抗蚀剂下层膜和基板在基板上形成图案; 和（4）用碱液除去抗蚀剂下层膜。
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