发明授权
- 专利标题: Optical integrated semiconductor light emitting device
- 专利标题(中): 光集成半导体发光器件
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申请号: US11344468申请日: 2006-01-31
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公开(公告)号: US08513683B2公开(公告)日: 2013-08-20
- 发明人: Osamu Maeda , Tsuyoshi Fujimoto , Motonobu Takeya , Toshihiro Hashidu , Masaki Shiozaki , Yoshio Oofuji
- 申请人: Osamu Maeda , Tsuyoshi Fujimoto , Motonobu Takeya , Toshihiro Hashidu , Masaki Shiozaki , Yoshio Oofuji
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: The Chicago Technology Law Group, LLC
- 代理商 Robert J. Depke
- 优先权: JP2005-027815 20050203
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
An optical integrated semiconductor light emitting device with improved light emitting efficiency is provided by preventing leak current from flowing through a high defect region of the substrate. The optical integrated semiconductor light emitting device includes: a substrate, in which in a low defect region made of crystal having a first average dislocation density, one or more high defect regions having a second average dislocation density higher than the first average dislocation density are included; and a Group III-V nitride semiconductor layer which is formed on the substrate, has a plurality of light emitting device structures, and has a groove in the region including the region corresponding to the high defect region (high defect region).
公开/授权文献
- US20060192209A1 Optical integrated semiconductor light emitting device 公开/授权日:2006-08-31