发明授权
- 专利标题: Laser diode
- 专利标题(中): 激光二极管
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申请号: US12805876申请日: 2010-08-23
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公开(公告)号: US08514905B2公开(公告)日: 2013-08-20
- 发明人: Yuji Masui , Rintaro Koda , Tomoyuki Oki , Takahiro Arakida , Naoki Jogan , Yoshinori Yamauchi
- 申请人: Yuji Masui , Rintaro Koda , Tomoyuki Oki , Takahiro Arakida , Naoki Jogan , Yoshinori Yamauchi
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Rader, Fishman & Grauer PLLC
- 优先权: JP2009-210735 20090911
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
A laser diode with which separation of a current narrowing layer is able to be prevented is provided. The laser diode includes a mesa that has a first multilayer film reflector, an active layer, and a second multilayer film reflector in this order, and has a current narrowing layer for narrowing a current injected into the active layer and a buffer layer adjacent to the current narrowing layer. The current narrowing layer is formed by oxidizing a first oxidized layer containing Al. The buffer layer is formed by oxidizing a second oxidized layer whose material and a thickness are selected so that an oxidation rate is higher than that of the first multilayer film reflector and the second multilayer film reflector and is lower than that of the first oxidized layer. A thickness of the buffer layer is 10 nm or more.
公开/授权文献
- US20110064109A1 Laser diode 公开/授权日:2011-03-17