公开(公告)号：US08085827B2

公开(公告)日：2011-12-27

申请号：US12379824

申请日：2009-03-03

Applicant: Tomoyuki Oki ,  Rintaro Koda ,  Naoki Jogan ,  Yuji Masui ,  Takahiro Arakida

Inventor： Tomoyuki Oki ,  Rintaro Koda ,  Naoki Jogan ,  Yuji Masui ,  Takahiro Arakida

IPC: H01S5/00

CPC classification number: H01S5/18311 ,  H01S5/0425 ,  H01S5/18358 ,  H01S5/2086

Abstract: A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.

Abstract translation: 提供了一种垂直腔表面发射激光器，其能够降低由于基座的位移和分离而导致的屈服的降低，而没有极大的阈值增加和更困难的制造过程。 台面的底部扩展到较低DBR层的顶面。 基部是露出多层的端面的非平坦面。 由于在形成台面时的蚀刻不均匀性而产生非平坦面，并且处于下层DBR层中包括的低折射率层和高折射率层的端面的步骤的状态 裸露。 包含在下DBR层中的多个低折射率层中的非平坦面露出的层中的至少一层是氧化抑制层。

公开(公告)号：US08027370B2

公开(公告)日：2011-09-27

申请号：US12656165

申请日：2010-01-20

Applicant: Yuji Masui ,  Takahiro Arakida ,  Kayoko Kikuchi ,  Terukazu Naruse ,  Tomoyuki Oki ,  Naoki Jogan

Inventor： Yuji Masui ,  Takahiro Arakida ,  Kayoko Kikuchi ,  Terukazu Naruse ,  Tomoyuki Oki ,  Naoki Jogan

IPC: H01S5/00 ,  H01S3/13

CPC classification number: H01S5/02276 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/1835 ,  H01S5/34313 ,  H01S2301/176

Abstract: The present invention provides a semiconductor device realizing improved adhesion between a low-dielectric-constant material and a semiconductor material. The semiconductor device includes, on a semiconductor layer, an adhesion layer and a low-dielectric-constant material layer in order from the semiconductor layer side. The adhesion layer has a projection/recess structure, and the low-dielectric-constant material layer is formed so as to bury gaps in the projection/recess structure.

Abstract translation: 本发明提供一种半导体器件，其实现了低介电常数材料与半导体材料之间的粘合性的改善。 半导体器件在半导体层上包括从半导体层侧开始的粘合层和低介电常数材料层。 粘合层具有突出/凹陷结构，并且形成低介电常数材料层以便在突出/凹陷结构中埋入间隙。

公开(公告)号：US20110176570A1

公开(公告)日：2011-07-21

申请号：US13064337

申请日：2011-03-21

Applicant: Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki ,  Naoki Jogan

Inventor： Yuji Masui ,  Takahiro Arakida ,  Yoshinori Yamauchi ,  Rintaro Koda ,  Tomoyuki Oki ,  Naoki Jogan

IPC: H01S5/20

CPC classification number: H01S5/1833 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18322 ,  H01S5/18325 ,  H01S5/18383 ,  H01S5/2086 ,  H01S5/3095 ,  H01S5/4087

Abstract: A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.

公开(公告)号：US20100202482A1

公开(公告)日：2010-08-12

申请号：US12656165

申请日：2010-01-20

Applicant: Yuji Masui ,  Takahiro Arakida ,  Kayoko Kikuchi ,  Terukazu Naruse ,  Tomoyuki Oki ,  Naoki Jogan

Inventor： Yuji Masui ,  Takahiro Arakida ,  Kayoko Kikuchi ,  Terukazu Naruse ,  Tomoyuki Oki ,  Naoki Jogan

IPC: H01S5/02

CPC classification number: H01S5/02276 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/1835 ,  H01S5/34313 ,  H01S2301/176

Abstract: The present invention provides a semiconductor device realizing improved adhesion between a low-dielectric-constant material and a semiconductor material. The semiconductor device includes, on a semiconductor layer, an adhesion layer and a low-dielectric-constant material layer in order from the semiconductor layer side. The adhesion layer has a projection/recess structure, and the low-dielectric-constant material layer is formed so as to bury gaps in the projection/recess structure.

Abstract translation: 本发明提供一种半导体器件，其实现了低介电常数材料与半导体材料之间的粘合性的改善。 半导体器件在半导体层上包括从半导体层侧开始的粘合层和低介电常数材料层。 粘合层具有突出/凹陷结构，并且形成低介电常数材料层以便在突出/凹陷结构中埋入间隙。

公开(公告)号：US20100200868A1

公开(公告)日：2010-08-12

申请号：US12657809

申请日：2010-01-28

Applicant: Yuji Masui ,  Rintaro Koda ,  Osamu Maeda ,  Takahiro Arakida ,  Terukazu Naruse ,  Naoki Jogan

Inventor： Yuji Masui ,  Rintaro Koda ,  Osamu Maeda ,  Takahiro Arakida ,  Terukazu Naruse ,  Naoki Jogan

IPC: H01L33/00

CPC classification number: H01S5/0264

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element including a first multilayer reflector, an active layer having a light-emitting region, and a second multilayer reflector in the stated order; a semiconductor light-detecting element disposed opposite the first multilayer reflector in relation to the semiconductor light-emitting element and including a light-absorbing layer configured to absorb light emitted from the light-emitting region; a transparent substrate disposed between the semiconductor light-emitting element and the semiconductor light-detecting element; a first metal layer having a first opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-emitting element and the substrate; and a second metal layer having a second opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-detecting element and the substrate.

Abstract translation: 半导体发光器件包括具有第一多层反射器，具有发光区域的有源层和按照所述顺序的第二多层反射器的半导体发光元件; 相对于所述半导体发光元件与所述第一多层反射体相对设置并且包括被配置为吸收从所述发光区域发射的光的光吸收层的半导体光检测元件; 设置在所述半导体发光元件和所述半导体光检测元件之间的透明基板; 第一金属层，其在包括与所述发光区域相对的区域的区域中具有第一开口，并且接合所述半导体发光元件和所述基板; 以及第二金属层，其在包括与发光区域相对的区域的区域中具有第二开口，并且接合半导体光检测元件和基板。

公开(公告)号：US20100046565A1

公开(公告)日：2010-02-25

申请号：US12458962

申请日：2009-07-28

Applicant: Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Osamu Maeda ,  Tomoyuki Oki ,  Naoki Jogan

Inventor： Yuji Masui ,  Takahiro Arakida ,  Rintaro Koda ,  Osamu Maeda ,  Tomoyuki Oki ,  Naoki Jogan

IPC: H01S5/183 ,  H01S5/028

CPC classification number: H01S5/18336 ,  H01S5/0655 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18358 ,  H01S2301/166

Abstract: A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in which a current injection region is formed in a region corresponding to the light emission region in the first multilayer reflecting mirror, between the first multilayer reflecting mirror and the active layer, between the active layer and the second multilayer reflecting mirror, or in the second multilayer reflecting mirror. In the transverse-mode adjustment layer, reflectance at an oscillation wavelength in the region opposite to a center of the light emission region is higher than that at an oscillation wavelength in the region opposite to an outer edge of the light emission region.

Abstract translation: 垂直腔表面发射激光器包括层叠结构，其包括在基板上的横向模式调整层，第一多层反射镜，具有发光区域的有源层和第二多层反射镜，从 并且包括电流限制层，其中在与第一多层反射镜中的发光区域对应的区域中在第一多层反射镜和有源层之间形成电流注入区域，在有源层和 第二多层反射镜，或第二多层反射镜。 在横模调整层中，与发光区域的中心相反的区域的振荡波长的反射率高于与发光区域的外缘相反的区域的振荡波长的反射率。

公开(公告)号：US08218596B2

公开(公告)日：2012-07-10

申请号：US13317165

申请日：2011-10-12

Applicant: Tomoyuki Oki ,  Rintaro Koda ,  Naoki Jogan ,  Yuji Masui ,  Takahiro Arakida

Inventor： Tomoyuki Oki ,  Rintaro Koda ,  Naoki Jogan ,  Yuji Masui ,  Takahiro Arakida

IPC: H01S5/00

CPC classification number: H01S5/18311 ,  H01S5/0425 ,  H01S5/18358 ,  H01S5/2086

Abstract: A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer.

Abstract translation: 提供了一种垂直腔表面发射激光器，其能够降低由于基座的位移和分离而导致的屈服的降低，而没有极大的阈值增加和更困难的制造过程。 台面的底部扩展到较低DBR层的顶面。 基部是露出多层的端面的非平坦面。 由于在形成台面时的蚀刻不均匀性而产生非平坦面，并且处于下层DBR层中包括的低折射率层和高折射率层的端面的步骤的状态 裸露。 包含在下DBR层中的多个低折射率层中的非平坦面露出的层中的至少一层是氧化抑制层。

公开(公告)号：US20120009704A1

公开(公告)日：2012-01-12

申请号：US13137851

申请日：2011-09-19

Applicant: Yuji Masui ,  Takahiro Arakida ,  Terukazu Naruse ,  Rintaro Koda ,  Naoki Jogan

Inventor： Yuji Masui ,  Takahiro Arakida ,  Terukazu Naruse ,  Rintaro Koda ,  Naoki Jogan

IPC: H01L33/60

CPC classification number: H01S5/18344 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/1835

Abstract: A vertical cavity surface emitting laser capable of reducing parasitic capacitance while suppressing power consumption, and a method of manufacturing thereof are provided. The vertical cavity surface emitting laser includes a columnar mesa including, on a substrate, a first multilayer reflector, an active layer, and a second multilayer reflector in order from the substrate side, and also including a current narrowing layer. The columnar portion of the mesa including the active layer and the current narrowing layer is formed within a region opposed to the first multilayer reflector and a region opposed to the second multilayer reflector, and a cross section area of the columnar portion is smaller than a cross section area of the second multilayer reflector.

Abstract translation: 提供能够抑制功耗的同时降低寄生电容的垂直腔表面发射激光器及其制造方法。 垂直腔表面发射激光器包括柱状台面，其从衬底侧起依次包括在衬底上的第一多层反射器，有源层和第二多层反射器，并且还包括电流变窄层。 包括有源层和电流变窄层的台面的柱状部分形成在与第一多层反射体相对的区域和与第二多层反射体相对的区域中，柱状部分的横截面面积小于十字形 第二多层反射器的截面积。

公开(公告)号：US20110249696A1

公开(公告)日：2011-10-13

申请号：US13064524

申请日：2011-03-30

Applicant: Yuji Masui ,  Takahiro Arakida ,  Kayoko Kikuchi ,  Terukazu Naruse ,  Koichi Kondo ,  Naoki Jogan

Inventor： Yuji Masui ,  Takahiro Arakida ,  Kayoko Kikuchi ,  Terukazu Naruse ,  Koichi Kondo ,  Naoki Jogan

IPC: H01S5/00

CPC classification number: H01S5/0425 ,  H01S5/18313 ,  H01S5/18338 ,  H01S5/18347

Abstract: There is provided a laser diode capable of setting a mesa diameter small without use of a method which loses reliability of a device, and is not easily controlled. The laser diode includes: a columnar mesa including a first multilayer film reflecting mirror, an active layer, and a second multilayer film reflecting mirror in this order, including an oxide confined layer having an unoxidized region in middle of a plane, and having a cross-sectional shape in a plane direction different from a cross-sectional shape of the unoxidized region in a plane direction; and a plurality of metal electrodes formed in regions on a top face of the mesa not facing the unoxidized region.

Abstract translation: 本发明提供一种激光二极管，能够将台面直径设定得较小，而不使用失去设备可靠性的方法，不容易控制。 激光二极管包括：包括第一多层膜反射镜，有源层和第二多层膜反射镜的柱状台面，其包括在平面中间具有未氧化区域的氧化物限制层，并且具有十字形 在与平面方向上的非氧化区域的横截面形状不同的平面方向上的截面形状; 以及形成在不面向未氧化区域的台面的顶面的区域中的多个金属电极。

公开(公告)号：US20110042558A1

公开(公告)日：2011-02-24

申请号：US12805494

申请日：2010-08-03

Applicant: Terukazu Naruse ,  Takahiro Arakida ,  Hidehiko Nakata ,  Yuji Masui ,  Naoki Jogan

Inventor： Terukazu Naruse ,  Takahiro Arakida ,  Hidehiko Nakata ,  Yuji Masui ,  Naoki Jogan

IPC: H01L31/12 ,  H01L31/0203 ,  B05D3/06

CPC classification number: H01L31/0203 ,  G02B6/4204 ,  G02B6/4239 ,  G02B6/4286 ,  G02B7/025 ,  G02B19/0014 ,  G02B19/0061

Abstract: An optical device and a method of making an optical device is described herein. The optical device comprises a housing, an optical element, a base structure that supports the optical element and that interfaces with the housing to form a gap section between an outer wall section of the base structure and an inner wall section of the housing, a resin within the gap section fixing the housing to the base structure, and a light accommodation section in the housing. The light accommodation section accommodates a transmittance of light to the resin within the gap section.

Abstract translation: 本文描述了光学装置和制造光学装置的方法。 光学装置包括壳体，光学元件，支撑光学元件并与壳体接合以在基部结构的外壁部分和壳体的内壁部分之间形成间隙部分的基部结构，树脂 在将壳体固定到基座结构的间隙部分内，以及壳体中的光容纳部分。 光容纳部容纳在间隙部内的树脂的透光率。