Invention Grant
- Patent Title: Carbon implantation process and carbon ion precursor composition
- Patent Title (中): 碳注入工艺和碳离子前驱体组成
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Application No.: US13010397Application Date: 2011-01-20
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Publication No.: US08524584B2Publication Date: 2013-09-03
- Inventor: William D. Lee , Daniel R. Tieger , Tseh-Jen Hsieh
- Applicant: William D. Lee , Daniel R. Tieger , Tseh-Jen Hsieh
- Applicant Address: US MA Beverly
- Assignee: Axcelis Technologies, Inc.
- Current Assignee: Axcelis Technologies, Inc.
- Current Assignee Address: US MA Beverly
- Agency: Cantor Colburn LLP
- Main IPC: H01L21/26
- IPC: H01L21/26

Abstract:
Methods and carbon ion precursor compositions for implanting carbon ions generally includes vaporizing and ionizing a gas mixture including carbon oxide and methane gases in an ion source to create a plasma and produce carbon ions. The ionized carbon within the plasma is then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit the ionized carbon to pass therethrough and implant into a workpiece.
Public/Granted literature
- US20120190181A1 CARBON IMPLANTATION PROCESS AND CARBON ION PRECURSOR COMPOSITION Public/Granted day:2012-07-26
Information query
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