发明授权
- 专利标题: Trench type power transistor device
- 专利标题(中): 沟槽型功率晶体管器件
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申请号: US13237940申请日: 2011-09-21
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公开(公告)号: US08536646B2公开(公告)日: 2013-09-17
- 发明人: Teng-Hao Yeh , Shian-Hau Liao , Chia-Hui Chen , Sung-Shan Tai
- 申请人: Teng-Hao Yeh , Shian-Hau Liao , Chia-Hui Chen , Sung-Shan Tai
- 申请人地址: TW Hsinchu Science Park, Hsinchu
- 专利权人: Sinopower Semiconductor Inc.
- 当前专利权人: Sinopower Semiconductor Inc.
- 当前专利权人地址: TW Hsinchu Science Park, Hsinchu
- 代理商 Winston Hsu; Scott Margo
- 主分类号: H01L29/66
- IPC分类号: H01L29/66
摘要:
The present invention provides a trench type power transistor device including a semiconductor substrate, at least one transistor cell, a gate metal layer, a source metal layer, and a second gate conductive layer. The semiconductor substrate has at least one trench. The transistor cell includes a first gate conductive layer disposed in the trench. The gate metal layer and the source metal layer are disposed on the semiconductor substrate. The second gate conductive layer is disposed between the first gate conductive layer and the source metal layer. The second gate conductive layer electrically connects the first gate conductive layer to the gate metal layer, and the second gate conductive layer is electrically insulated from the source metal layer and the semiconductor substrate.