发明授权
- 专利标题: Power transistor device vertical integration
- 专利标题(中): 功率晶体管器件垂直整合
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申请号: US13082679申请日: 2011-04-08
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公开(公告)号: US08541833B2公开(公告)日: 2013-09-24
- 发明人: Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Franz Hirler
- 申请人: Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Franz Hirler
- 申请人地址: AT Villach
- 专利权人: Infineon Technologies Austria AG
- 当前专利权人: Infineon Technologies Austria AG
- 当前专利权人地址: AT Villach
- 代理机构: Murphy, Bilak & Homiller, PLLC
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L21/70
摘要:
A semiconductor component includes a sequence of layers, the sequence of layers including a first insulator layer, a first semiconductor layer disposed on the first insulator layer, a second insulator layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the second insulator layer. The semiconductor component also includes a plurality of devices at least partly formed in the first semiconductor layer. A first one of the plurality of devices is a power transistor formed in a first region of the first semiconductor layer and a first region of the second semiconductor layer. The first region of the first and second semiconductor layers are in electrical contact with one another through a first opening in the second insulator layer.
公开/授权文献
- US20120256250A1 Power Transistor Device Vertical Integration 公开/授权日:2012-10-11
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