公开(公告)号：US20140001514A1

公开(公告)日：2014-01-02

申请号：US13539944

申请日：2012-07-02

申请人： Hans-Joachim Schulze ,  Franz Hirler ,  Anton Mauder ,  Helmut Strack ,  Frank Kahlmann ,  Gerhard Miller

发明人： Hans-Joachim Schulze ,  Franz Hirler ,  Anton Mauder ,  Helmut Strack ,  Frank Kahlmann ,  Gerhard Miller

IPC分类号： H01L29/36 ,  H01L21/225

CPC分类号： H01L29/66348 ,  H01L21/2205 ,  H01L21/2658 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0878 ,  H01L29/102 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/167 ,  H01L29/36 ,  H01L29/402 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7397 ,  H01L29/7428 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/861 ,  H01L29/872

摘要： A semiconductor device includes a device region. The device region includes at least one device region section including dopant atoms of a first doping type and with a first doping concentration of at least 1E16 cm−3 and dopant atoms of a second doping type and with a second doping concentration of at least 1E16 cm−3.

摘要翻译： 半导体器件包括器件区域。 器件区域包括至少一个器件区域部分，其包括第一掺杂类型的掺杂剂原子和具有至少1E16cm-3的第一掺杂浓度和第二掺杂类型的掺杂剂原子，并且具有至少1E16cm的第二掺杂浓度 -3。

公开(公告)号：US20120256250A1

公开(公告)日：2012-10-11

申请号：US13082679

申请日：2011-04-08

申请人： Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Franz Hirler

发明人： Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Franz Hirler

IPC分类号： H01L27/06 ,  H01L21/336

CPC分类号： H01L21/823487 ,  H01L27/0694 ,  H01L27/1207 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component includes a sequence of layers, the sequence of layers including a first insulator layer, a first semiconductor layer disposed on the first insulator layer, a second insulator layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the second insulator layer. The semiconductor component also includes a plurality of devices at least partly formed in the first semiconductor layer. A first one of the plurality of devices is a power transistor formed in a first region of the first semiconductor layer and a first region of the second semiconductor layer. The first region of the first and second semiconductor layers are in electrical contact with one another through a first opening in the second insulator layer.

摘要翻译： 半导体部件包括一层层，所述层序列包括第一绝缘体层，设置在第一绝缘体层上的第一半导体层，设置在第一半导体层上的第二绝缘体层，以及设置在第二绝缘体层上的第二半导体层 绝缘体层。 半导体部件还包括至少部分地形成在第一半导体层中的多个器件。 多个器件中的第一个是在第一半导体层的第一区域和第二半导体层的第一区域中形成的功率晶体管。 第一和第二半导体层的第一区域通过第二绝缘体层中的第一开口彼此电接触。

公开(公告)号：US20080067626A1

公开(公告)日：2008-03-20

申请号：US11834154

申请日：2007-08-06

申请人： Franz Hirler ,  Thoralf Kautzsch ,  Anton Mauder ,  Michael Rueb ,  Hans-Joachim Schulze ,  Helmut Strack ,  Armin Willmeroth

发明人： Franz Hirler ,  Thoralf Kautzsch ,  Anton Mauder ,  Michael Rueb ,  Hans-Joachim Schulze ,  Helmut Strack ,  Armin Willmeroth

IPC分类号： H01L29/94 ,  H01L21/76

CPC分类号： H01L21/76224 ,  H01L21/3247 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/66621 ,  H01L29/7803 ,  H01L29/7804

摘要： A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure.

摘要翻译： 一种半导体器件，其中制造从半导体本体的表面进入半导体本体的第一沟槽部分。 在表面上方和第一沟槽部分之上产生半导体层。 在半导体层中产生另一沟槽部分，使得第一沟槽部分和另外的沟槽部分形成连续的沟槽结构。

公开(公告)号：US08541833B2

公开(公告)日：2013-09-24

申请号：US13082679

申请日：2011-04-08

申请人： Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Franz Hirler

发明人： Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Franz Hirler

IPC分类号： H01L29/66 ,  H01L21/70

CPC分类号： H01L21/823487 ,  H01L27/0694 ,  H01L27/1207 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component includes a sequence of layers, the sequence of layers including a first insulator layer, a first semiconductor layer disposed on the first insulator layer, a second insulator layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the second insulator layer. The semiconductor component also includes a plurality of devices at least partly formed in the first semiconductor layer. A first one of the plurality of devices is a power transistor formed in a first region of the first semiconductor layer and a first region of the second semiconductor layer. The first region of the first and second semiconductor layers are in electrical contact with one another through a first opening in the second insulator layer.

摘要翻译： 半导体部件包括一层层，所述层序列包括第一绝缘体层，设置在第一绝缘体层上的第一半导体层，设置在第一半导体层上的第二绝缘体层，以及设置在第二绝缘体层上的第二半导体层 绝缘体层。 半导体部件还包括至少部分地形成在第一半导体层中的多个器件。 多个器件中的第一个是在第一半导体层的第一区域和第二半导体层的第一区域中形成的功率晶体管。 第一和第二半导体层的第一区域通过第二绝缘体层中的第一开口彼此电接触。

公开(公告)号：US08786012B2

公开(公告)日：2014-07-22

申请号：US13542737

申请日：2012-07-06

申请人： Anton Mauder ,  Franz Hirler ,  Wolfgang Lehnert ,  Rudolf Berger ,  Klemens Pruegl ,  Hans-Joachim Schulze ,  Helmut Strack

发明人： Anton Mauder ,  Franz Hirler ,  Wolfgang Lehnert ,  Rudolf Berger ,  Klemens Pruegl ,  Hans-Joachim Schulze ,  Helmut Strack

IPC分类号： H01L29/66

CPC分类号： H01L21/28194 ,  H01L21/02109 ,  H01L21/02145 ,  H01L21/0228 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/51 ,  H01L29/513 ,  H01L29/66734 ,  H01L29/7393 ,  H01L29/7394 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7835 ,  H01L29/792 ,  H01L29/8611

摘要： A power semiconductor device has a semiconductor body which includes an active area and a peripheral area which both define a horizontal main surface of the semiconductor body. The semiconductor body further includes an n-type semiconductor layer, a pn junction and at least one trench. The n-type semiconductor layer is embedded in the semiconductor body and extends to the main surface in the peripheral area. The pn junction is arranged between the n-type semiconductor layer and the main surface in the active area. The at least one trench extends in the peripheral area from the main surface into the n-type semiconductor layer and includes a dielectric layer with fixed negative charges. In the vertical direction, the dielectric layer is arranged both below and above the pn junction. The dielectric layer with fixed negative charges typically has a negative net charge. Further, a method for forming a semiconductor device is provided.

摘要翻译： 功率半导体器件具有半导体本体，该半导体本体包括有源区域和限定半导体本体的水平主表面的周边区域。 半导体本体还包括n型半导体层，pn结和至少一个沟槽。 n型半导体层嵌入半导体本体中并延伸到周边区域的主表面。 pn结布置在有源区域中的n型半导体层和主表面之间。 至少一个沟槽在外围区域中从主表面延伸到n型半导体层中，并且包括具有固定的负电荷的电介质层。 在垂直方向上，介电层布置在pn结的下方和上方。 具有固定负电荷的电介质层通常具有负的净电荷。 此外，提供了一种用于形成半导体器件的方法。

公开(公告)号：US08748974B2

公开(公告)日：2014-06-10

申请号：US13542737

申请日：2012-07-06

申请人： Anton Mauder ,  Franz Hirler ,  Wolfgang Lehnert ,  Rudolf Berger ,  Klemens Pruegl ,  Hans-Joachim Schulze ,  Helmut Strack

发明人： Anton Mauder ,  Franz Hirler ,  Wolfgang Lehnert ,  Rudolf Berger ,  Klemens Pruegl ,  Hans-Joachim Schulze ,  Helmut Strack

IPC分类号： H01L29/66

摘要： A power semiconductor device has a semiconductor body which includes an active area and a peripheral area which both define a horizontal main surface of the semiconductor body. The semiconductor body further includes an n-type semiconductor layer, a pn junction and at least one trench. The n-type semiconductor layer is embedded in the semiconductor body and extends to the main surface in the peripheral area. The pn junction is arranged between the n-type semiconductor layer and the main surface in the active area. The at least one trench extends in the peripheral area from the main surface into the n-type semiconductor layer and includes a dielectric layer with fixed negative charges. In the vertical direction, the dielectric layer is arranged both below and above the pn junction. The dielectric layer with fixed negative charges typically has a negative net charge. Further, a method for forming a semiconductor device is provided.

公开(公告)号：US20120286355A1

公开(公告)日：2012-11-15

申请号：US13542737

申请日：2012-07-06

申请人： Anton Mauder ,  Franz Hirler ,  Wolfgang Lehnert ,  Rudolf Berger ,  Klemens Pruegl ,  Hans-Joachim Schulze ,  Helmut Strack

发明人： Anton Mauder ,  Franz Hirler ,  Wolfgang Lehnert ,  Rudolf Berger ,  Klemens Pruegl ,  Hans-Joachim Schulze ,  Helmut Strack

IPC分类号： H01L29/78 ,  H01L21/302 ,  H01L29/02

CPC分类号： H01L21/28194 ,  H01L21/02109 ,  H01L21/02145 ,  H01L21/0228 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/51 ,  H01L29/513 ,  H01L29/66734 ,  H01L29/7393 ,  H01L29/7394 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7835 ,  H01L29/792 ,  H01L29/8611

摘要： A power semiconductor device has a semiconductor body which includes an active area and a peripheral area which both define a horizontal main surface of the semiconductor body. The semiconductor body further includes an n-type semiconductor layer, a pn junction and at least one trench. The n-type semiconductor layer is embedded in the semiconductor body and extends to the main surface in the peripheral area. The pn junction is arranged between the n-type semiconductor layer and the main surface in the active area. The at least one trench extends in the peripheral area from the main surface into the n-type semiconductor layer and includes a dielectric layer with fixed negative charges. In the vertical direction, the dielectric layer is arranged both below and above the pn junction. The dielectric layer with fixed negative charges typically has a negative net charge. Further, a method for forming a semiconductor device is provided.

摘要翻译： 功率半导体器件具有半导体本体，该半导体本体包括有源区域和限定半导体本体的水平主表面的周边区域。 半导体本体还包括n型半导体层，pn结和至少一个沟槽。 n型半导体层嵌入半导体本体中并延伸到周边区域的主表面。 pn结布置在有源区域中的n型半导体层和主表面之间。 至少一个沟槽在外围区域中从主表面延伸到n型半导体层中，并且包括具有固定的负电荷的电介质层。 在垂直方向上，介电层布置在pn结的下方和上方。 具有固定负电荷的电介质层通常具有负的净电荷。 此外，提供了一种用于形成半导体器件的方法。

公开(公告)号：US09245760B2

公开(公告)日：2016-01-26

申请号：US12895664

申请日：2010-09-30

申请人： Anton Mauder ,  Hans-Joachim Schulze ,  Hans-Joerg Timme ,  Franz Hirler ,  Francisco Javier Santos Rodriguez

发明人： Anton Mauder ,  Hans-Joachim Schulze ,  Hans-Joerg Timme ,  Franz Hirler ,  Francisco Javier Santos Rodriguez

IPC分类号： H01L21/20 ,  H01L21/306 ,  H01L21/02 ,  H01L21/78 ,  H01L29/78

CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/306 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/78 ,  H01L29/045 ,  H01L29/45 ,  H01L29/7846 ,  H01L29/7848

摘要： In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the first porous semiconductor layer. A circuitry is formed within and over the first epitaxial layer. The circuitry is formed without completely oxidizing the first epitaxial layer.

摘要翻译： 在一个实施例中，形成半导体器件的方法包括在衬底的顶表面上形成第一多孔半导体层。 在第一多孔半导体层上形成第一外延层。 在第一外延层内和上方形成电路。 在不完全氧化第一外延层的情况下形成电路。

公开(公告)号：US08461648B2

公开(公告)日：2013-06-11

申请号：US11996906

申请日：2006-07-27

申请人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

发明人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

IPC分类号： H01L29/732

CPC分类号： H01L29/7803 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.

公开(公告)号：US20110215858A1

公开(公告)日：2011-09-08

申请号：US12718381

申请日：2010-03-05

申请人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch ,  Hans-Joachim Schulze

IPC分类号： H03K17/0412 ,  H01L29/739

CPC分类号： H01L29/739 ,  H03K17/0412

摘要： Disclosed is a method for controlling the recombination rate in the base region of a bipolar semiconductor component, and a bipolar semiconductor component.

摘要翻译： 公开了一种用于控制双极半导体部件和双极型半导体部件的基极区域中的复合率的方法。