发明授权
- 专利标题: Semiconductor wafer manufacturing method
- 专利标题(中): 半导体晶圆制造方法
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申请号: US12679731申请日: 2008-09-11
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公开(公告)号: US08545712B2公开(公告)日: 2013-10-01
- 发明人: Hiroshi Takai , Kenji Satomura , Yuichi Nakayoshi , Katsutoshi Yamamoto , Kouji Mizowaki
- 申请人: Hiroshi Takai , Kenji Satomura , Yuichi Nakayoshi , Katsutoshi Yamamoto , Kouji Mizowaki
- 申请人地址: JP Omura-Shi
- 专利权人: Sumco Techxiv Corporation
- 当前专利权人: Sumco Techxiv Corporation
- 当前专利权人地址: JP Omura-Shi
- 代理机构: Holtz, Holtz, Goodman & Chick, PC
- 优先权: JP2007-247743 20070925
- 国际申请: PCT/JP2008/066412 WO 20080911
- 国际公布: WO2009/041277 WO 20090402
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; B44C1/22
摘要:
In a method of manufacturing semiconductor wafers, front and back surfaces of the semiconductor wafers are simultaneously polished with a double-side polishing machine that includes: a carrier for accommodating the semiconductor wafer; and an upper press platen and a lower press platen for sandwiching the carrier. The method includes: accommodating the semiconductor wafer in the carrier while a thickness of the semiconductor wafer is set to be larger than a thickness of the carrier by 0 μm to 5 μm; and polishing the semiconductor wafer while feeding a polishing slurry to between the surfaces of the semiconductor wafer and surfaces of the press platens. In the polishing, an allowance of both surfaces of the semiconductor wafer is set at 5 μm or less in total.
公开/授权文献
- US20100285665A1 SEMICONDUCTOR WAFER MANUFACTURING METHOD 公开/授权日:2010-11-11
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