公开(公告)号：US20100285665A1

公开(公告)日：2010-11-11

申请号：US12679731

申请日：2008-09-11

申请人： Hiroshi Takai ,  Kenji Satomura ,  Yuichi Nakayoshi ,  Katsutoshi Yamamoto ,  Kouji Mizowaki

发明人： Hiroshi Takai ,  Kenji Satomura ,  Yuichi Nakayoshi ,  Katsutoshi Yamamoto ,  Kouji Mizowaki

IPC分类号： H01L21/306

CPC分类号： H01L21/02024 ,  B24B37/08

摘要： In a method of manufacturing semiconductor wafers, front and hack surfaces of the semiconductor wafers are simultaneously polished with a double-side polishing machine that includes: a carrier for accommodating the semiconductor wafer; and an upper press platen and a lower press platen for sandwiching the carrier. The method includes: accommodating the semiconductor wafer in the carrier while a thickness of the semiconductor wafer is set to be larger than a thickness of the carrier by 0 μm to 5 μm; and polishing the semiconductor wafer while feeding a polishing slurry to between the surfaces of the semiconductor wafer and surfaces of the press platens. In the polishing, an allowance of both surfaces of the semiconductor wafer is set at 5 μm or less in total.

摘要翻译： 在制造半导体晶片的方法中，用双面抛光机同时对半导体晶片的前面和后表面进行抛光，所述双面抛光机包括：用于容纳半导体晶片的载体; 以及用于夹持载体的上压板和下压板。 该方法包括：将半导体晶片容纳在载体中，同时将半导体晶片的厚度设定为大于载体厚度0μm至5μm; 并且在将半导体晶片的表面和压板的表面之间进行抛光浆料的同时抛光半导体晶片。 在研磨中，半导体晶片的两面的余量总计为5μm以下。

公开(公告)号：US08545712B2

公开(公告)日：2013-10-01

申请号：US12679731

申请日：2008-09-11

申请人： Hiroshi Takai ,  Kenji Satomura ,  Yuichi Nakayoshi ,  Katsutoshi Yamamoto ,  Kouji Mizowaki

发明人： Hiroshi Takai ,  Kenji Satomura ,  Yuichi Nakayoshi ,  Katsutoshi Yamamoto ,  Kouji Mizowaki

IPC分类号： H01L21/302 ,  B44C1/22

CPC分类号： H01L21/02024 ,  B24B37/08

摘要： In a method of manufacturing semiconductor wafers, front and back surfaces of the semiconductor wafers are simultaneously polished with a double-side polishing machine that includes: a carrier for accommodating the semiconductor wafer; and an upper press platen and a lower press platen for sandwiching the carrier. The method includes: accommodating the semiconductor wafer in the carrier while a thickness of the semiconductor wafer is set to be larger than a thickness of the carrier by 0 μm to 5 μm; and polishing the semiconductor wafer while feeding a polishing slurry to between the surfaces of the semiconductor wafer and surfaces of the press platens. In the polishing, an allowance of both surfaces of the semiconductor wafer is set at 5 μm or less in total.

摘要翻译： 在制造半导体晶片的方法中，半导体晶片的前表面和后表面用双面抛光机同时抛光，所述双面抛光机包括：用于容纳半导体晶片的载体; 以及用于夹持载体的上压板和下压板。 该方法包括：将半导体晶片容纳在载体中，同时将半导体晶片的厚度设定为大于载体厚度0μm至5μm; 并且在将半导体晶片的表面和压板的表面之间进行抛光浆料的同时抛光半导体晶片。 在研磨中，半导体晶片的两面的余量总计为5μm以下。

公开(公告)号：US09073173B2

公开(公告)日：2015-07-07

申请号：US12981305

申请日：2010-12-29

申请人： Hiroshi Takai ,  Yuichi Nakayoshi

发明人： Hiroshi Takai ,  Yuichi Nakayoshi

IPC分类号： B24B1/00 ,  B24B49/18 ,  B24B37/04 ,  B24B53/017 ,  B24B27/00

CPC分类号： B24B49/18 ,  B24B27/0076 ,  B24B37/042 ,  B24B53/017

摘要： A polishing pad shape measured by a polishing pad shape measuring apparatus is modified into a target shape of a polishing pad by using a dressing tool so that a wafer has a desired surface shape. The invention is a method for shape modification of a polishing pad 14 for polishing a workpiece into a desired surface shape, comprising: a measurement step S9 of measuring a polishing pad shape in a state of being attached to a plate 12 by using a polishing pad shape measuring apparatus 10; a condition determination step S10 of selecting a dressing recipe capable of polishing the workpiece into a desired surface shape from a plurality of pre-provided dressing recipes based on the measurement result in the measurement step S9; and a shape modification step S11 of dressing the polishing pad 14 by using the dressing recipe determined in the condition determination step S10.

摘要翻译： 通过使用修整工具将由研磨垫形状测量装置测量的抛光垫形状修改为抛光垫的目标形状，使得晶片具有期望的表面形状。 本发明是一种用于将工件抛光成所需表面形状的抛光垫14的形状修改方法，包括：测量步骤S9，其通过使用抛光垫测量安装在板12上的状态下的抛光垫形状 形状测量装置10; 条件确定步骤S10，基于测量步骤S9中的测量结果，从多个预先提供的敷料配方中选择能够将工件抛光成所需表面形状的修整配方; 以及通过使用在条件判定步骤S10中确定的敷料配方来修整抛光垫14的形状修改步骤S11。

公开(公告)号：US08296961B2

公开(公告)日：2012-10-30

申请号：US12694742

申请日：2010-01-27

申请人： Yuichi Nakayoshi ,  Hiroshi Takai ,  Hironori Nishimura

发明人： Yuichi Nakayoshi ,  Hiroshi Takai ,  Hironori Nishimura

IPC分类号： G01B3/20 ,  B24B49/02

CPC分类号： B24B37/20 ,  B24B37/042 ,  B24B49/105 ,  B24B49/18

摘要： A polishing pad thickness measuring method measures the thickness of a polishing pad attached to an upper surface of a surface plate. The polishing pad thickness measuring method measures a first distance between an upper surface of the polishing pad and a reference position on a vertical line perpendicular to the surface of the polishing pad and a second distance between an upper surface of the surface plate and the reference position on the vertical line, and calculates the thickness of the polishing pad from the difference between the first and second distances.

摘要翻译： 抛光垫厚度测量方法测量附着在表面板上表面的抛光垫的厚度。 抛光垫厚度测量方法测量抛光垫的上表面与垂直于抛光垫表面的垂直线上的基准位置之间的第一距离，并且测量表面板的上表面与基准位置之间的第二距离 并且从第一和第二距离之间的差计算抛光垫的厚度。

公开(公告)号：US20110171885A1

公开(公告)日：2011-07-14

申请号：US12981305

申请日：2010-12-29

申请人： Hiroshi Takai ,  Yuichi Nakayoshi

发明人： Hiroshi Takai ,  Yuichi Nakayoshi

IPC分类号： B24B1/00

CPC分类号： B24B49/18 ,  B24B27/0076 ,  B24B37/042 ,  B24B53/017

摘要： A polishing pad shape measured by a polishing pad shape measuring apparatus is modified into a target shape of a polishing pad by using a dressing tool so that a wafer has a desired surface shape. The invention is a method for shape modification of a polishing pad 14 for polishing a workpiece into a desired surface shape, comprising: a measurement step S9 of measuring a polishing pad shape in a state of being attached to a plate 12 by using a polishing pad shape measuring apparatus 10; a condition determination step S10 of selecting a dressing recipe capable of polishing the workpiece into a desired surface shape from a plurality of pre-provided dressing recipes based on the measurement result in the measurement step S9; and a shape modification step S11 of dressing the polishing pad 14 by using the dressing recipe determined in the condition determination step S10.

摘要翻译： 通过使用修整工具将由研磨垫形状测量装置测量的抛光垫形状修改为抛光垫的目标形状，使得晶片具有期望的表面形状。 本发明是一种用于将工件抛光成所需表面形状的抛光垫14的形状修改方法，包括：测量步骤S9，其通过使用抛光垫测量安装在板12上的状态下的抛光垫形状 形状测量装置10; 条件确定步骤S10，基于测量步骤S9中的测量结果，从多个预先提供的敷料配方中选择能够将工件抛光成所需表面形状的修整配方; 以及通过使用在条件判定步骤S10中确定的敷料配方来修整抛光垫14的形状修改步骤S11。

公开(公告)号：US09301704B2

公开(公告)日：2016-04-05

申请号：US11090852

申请日：2005-03-25

申请人： Hiroshi Takai ,  Yoshimori Kassai

发明人： Hiroshi Takai ,  Yoshimori Kassai

IPC分类号： A61B5/05 ,  A61B5/055

CPC分类号： A61B5/055

摘要： A magnetic resonance imaging system uses a first RF coil for acquiring a magnetic resonance signal from a subject, and a device for estimating a cardiac phase of the subject based on the magnetic resonance signal acquired by the first RF coil. The first RF coil, for example, can be an RF coil exclusive to cardiac phase estimation. The magnetic resonance imaging system also uses a second RF coil for acquiring a magnetic resonance signal based on the estimated cardiac phase, and a device for reconstructing a magnetic resonance image of the subject based on the magnetic resonance signal acquired by the second RF coil. Thus, MRA can be performed by estimating a cardiac phase.

摘要翻译： 磁共振成像系统使用第一RF线圈来获取来自对象的磁共振信号，以及用于基于由第一RF线圈获取的磁共振信号估计对象的心脏相位的装置。 例如，第一RF线圈可以是专用于心脏相位估计的RF线圈。 磁共振成像系统还使用第二RF线圈来基于估计的心脏相位获取磁共振信号，以及用于基于由第二RF线圈获取的磁共振信号重建对象的磁共振图像的装置。 因此，可以通过估计心脏相位来执行MRA。

公开(公告)号：USRE43784E1

公开(公告)日：2012-11-06

申请号：US12929947

申请日：2011-02-25

申请人： Mitsue Miyazaki ,  Hiroshi Takai

发明人： Mitsue Miyazaki ,  Hiroshi Takai

IPC分类号： G01V3/00

CPC分类号： G01R33/5635 ,  G01R33/543 ,  G01R33/546 ,  G01R33/5602 ,  G01R33/5613 ,  G01R33/563 ,  G01R33/56509 ,  G01R33/5673 ,  G01R33/583 ,  G01R33/586

摘要： To optimize in advance a desired image quality determining pulse sequence parameter incorporated in an imaging scan, a preparation scan is adopted. The preparation scan is performed with the amount of at least one desired image quality parameter changed for each of plural preparatory images, so that a plurality of preparatory images at the desired same region of the object are acquired. For example, one such image quality parameter is TI (inversion time). The acquired preparatory scan data are processed into a plurality of preparatory images for display. A desired preparatory image is then selected from the plural preparatory images displayed, and the amount of the desired parameter used for that selected preparatory image is then set for use in the pulse sequence for a complete diagnostic imaging scan. Hence the desired image quality determining parameter of the pulse sequence is caused to have an optimum value before an actual complete diagnostic imaging scan.

公开(公告)号：US07689015B2

公开(公告)日：2010-03-30

申请号：US11319775

申请日：2005-12-29

申请人： Hiroshi Takai

发明人： Hiroshi Takai

IPC分类号： G06K9/00

CPC分类号： G01R33/56563 ,  G01R33/5616 ,  G01R33/56536 ,  G01R33/56572 ,  Y10S128/922

摘要： A magnetic resonance imaging apparatus comprises an imaging condition setting unit, a receiving unit, an image reconstructing unit, an image distortion correcting unit and an image correction estimating unit. The imaging condition setting unit sets mutually different image conditions. The receiving unit receives magnetic resonance signals from an imaging area according to the image conditions. The image reconstructing unit reconstructs a plurality of image data corresponding to the image conditions respectively based on the magnetic resonance signals. The image distortion correcting unit corrects distortions of the plurality of the image data based on a magnetic field distribution on the imaging area. The image correction estimating unit estimates whether a correction of at least one of the plurality of the image data is appropriate based on a plurality of corrected image data.

摘要翻译： 磁共振成像设备包括成像条件设置单元，接收单元，图像重建单元，图像失真校正单元和图像校正估计单元。 成像条件设定单元设定相互不同的图像条件。 接收单元根据图像条件从成像区域接收磁共振信号。 图像重建单元基于磁共振信号分别重构与图像条件对应的多个图像数据。 图像失真校正单元基于成像区域上的磁场分布校正多个图像数据的失真。 图像校正估计单元基于多个校正图像数据来估计多个图像数据中的至少一个的校正是否适合。

公开(公告)号：US5352385A

公开(公告)日：1994-10-04

申请号：US834258

申请日：1992-03-25

申请人： Hiroaki Yanagida ,  Akio Matsui ,  Tokumitsu Nishi ,  Kouji Okuda ,  Hiroshi Takai ,  Hisakiyo Hoshino ,  Masahi Numano ,  Natsumi Miyake

发明人： Hiroaki Yanagida ,  Akio Matsui ,  Tokumitsu Nishi ,  Kouji Okuda ,  Hiroshi Takai ,  Hisakiyo Hoshino ,  Masahi Numano ,  Natsumi Miyake

IPC分类号： C04B37/00 ,  H01B1/00 ,  H01B1/06

CPC分类号： C04B37/005 ,  C04B2235/666 ,  C04B2237/06 ,  C04B2237/062 ,  C04B2237/066 ,  C04B2237/08 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/368

摘要： Described in a joining agent for joining electrically ceramic bodies by heating the joining agent inserted at the parts to be jointed between the ceramic bodies with an electric current flowing predominantly through the joining agent at high temperature. The joining agent is superior in the wetability and reactivity with the ceramics to ensure the joint part strength. The joining agent includes, as an electric conductor, an electric conductive component made of an ion conductor consisting of fluoride, chloride, and/or oxide, which forms carrier ions by the pre-heating and has an electric conductivity higher than that of the ceramic body at the electric current supplying time. During the supplying electric current to time, the joining agent has the electric resistance increased gradually at the molten state of the joining agent by decreasing the density or the mobility of the carrier ions. After the electric heating, the joining agent is changed into a composition having a high electric resistance and hence the electric current path moves smoothly.

摘要翻译： PCT No.PCT / JP91 / 00796 Sec。 371日期：1992年3月25日 102（e）1992年3月25日PCT PCT 1991年6月13日PCT公布。 出版物WO91 / 19689 日期为1991年12月26日。描​​述了通过加热插入陶瓷体之间待接合部分的接合剂与主要通过接合剂高温流动的电流来接合电陶瓷体的接合剂。 接合剂与陶瓷的润湿性和反应性优越，以确保接合部件强度。 接合剂包括作为导电体的由由氟化物，氯化物和/或氧化物组成的离子导体制成的导电组分，其通过预热形成载流子离子，并且具有比陶瓷的导电性更高的导电性 身体在电流供应时间。 在供给电流期间，通过降低载流子离子的密度或迁移率，接合剂在接合剂的熔融状态下电阻逐渐增加。 在电加热之后，接合剂变成具有高电阻的组合物，因此电流路径平稳地移动。

公开(公告)号：USRE43637E1

公开(公告)日：2012-09-11

申请号：US11802080

申请日：2007-05-18

申请人： Mitsue Miyazaki ,  Hiroshi Takai

发明人： Mitsue Miyazaki ,  Hiroshi Takai

IPC分类号： G01V3/00

CPC分类号： G01R33/5635 ,  G01R33/543 ,  G01R33/546 ,  G01R33/5602 ,  G01R33/5613 ,  G01R33/563 ,  G01R33/56509 ,  G01R33/5673 ,  G01R33/583 ,  G01R33/586

摘要： To optimize in advance a desired image quality determining pulse sequence parameter incorporated in an imaging scan, a preparation scan is adopted. The preparation scan is performed with the amount of at least one desired image quality parameter changed for each of plural preparatory images, so that a plurality of preparatory images at the desired same region of the object are acquired. For example, one such image quality parameter is TI (inversion time). The acquired preparatory scan data are processed into a plurality of preparatory images for display. A desired preparatory image is then selected from the plural preparatory images displayed, and the amount of the desired parameter used for that selected preparatory image is then set for use in the pulse sequence for a complete diagnostic imaging scan. Hence the desired image quality determining parameter of the pulse sequence is caused to have an optimum value before an actual complete diagnostic imaging scan.

摘要翻译： 为了提前优化结合在成像扫描中的所需图像质量确定脉冲序列参数，采用准备扫描。 以对于多个准备图像中的每一个改变了至少一个期望的图像质量参数的量来执行准备扫描，从而获取在对象的期望的相同区域处的多个准备图像。 例如，一个这样的图像质量参数是TI（反转时间）。 所获取的准备扫描数据被处理成多个准备图像用于显示。 然后从显示的多个预备图像中选择期望的准备图像，然后将用于该选择的预备图像的期望参数的量设置为用于完整诊断成像扫描的脉冲序列。 因此，使脉冲序列的期望图像质量确定参数在实际完成诊断成像扫描之前具有最佳值。