公开(公告)号：US08545712B2

公开(公告)日：2013-10-01

申请号：US12679731

申请日：2008-09-11

申请人： Hiroshi Takai ,  Kenji Satomura ,  Yuichi Nakayoshi ,  Katsutoshi Yamamoto ,  Kouji Mizowaki

发明人： Hiroshi Takai ,  Kenji Satomura ,  Yuichi Nakayoshi ,  Katsutoshi Yamamoto ,  Kouji Mizowaki

IPC分类号： H01L21/302 ,  B44C1/22

CPC分类号： H01L21/02024 ,  B24B37/08

摘要： In a method of manufacturing semiconductor wafers, front and back surfaces of the semiconductor wafers are simultaneously polished with a double-side polishing machine that includes: a carrier for accommodating the semiconductor wafer; and an upper press platen and a lower press platen for sandwiching the carrier. The method includes: accommodating the semiconductor wafer in the carrier while a thickness of the semiconductor wafer is set to be larger than a thickness of the carrier by 0 μm to 5 μm; and polishing the semiconductor wafer while feeding a polishing slurry to between the surfaces of the semiconductor wafer and surfaces of the press platens. In the polishing, an allowance of both surfaces of the semiconductor wafer is set at 5 μm or less in total.

摘要翻译： 在制造半导体晶片的方法中，半导体晶片的前表面和后表面用双面抛光机同时抛光，所述双面抛光机包括：用于容纳半导体晶片的载体; 以及用于夹持载体的上压板和下压板。 该方法包括：将半导体晶片容纳在载体中，同时将半导体晶片的厚度设定为大于载体厚度0μm至5μm; 并且在将半导体晶片的表面和压板的表面之间进行抛光浆料的同时抛光半导体晶片。 在研磨中，半导体晶片的两面的余量总计为5μm以下。

公开(公告)号：US20100285665A1

公开(公告)日：2010-11-11

申请号：US12679731

申请日：2008-09-11

申请人： Hiroshi Takai ,  Kenji Satomura ,  Yuichi Nakayoshi ,  Katsutoshi Yamamoto ,  Kouji Mizowaki

发明人： Hiroshi Takai ,  Kenji Satomura ,  Yuichi Nakayoshi ,  Katsutoshi Yamamoto ,  Kouji Mizowaki

IPC分类号： H01L21/306

CPC分类号： H01L21/02024 ,  B24B37/08

摘要： In a method of manufacturing semiconductor wafers, front and hack surfaces of the semiconductor wafers are simultaneously polished with a double-side polishing machine that includes: a carrier for accommodating the semiconductor wafer; and an upper press platen and a lower press platen for sandwiching the carrier. The method includes: accommodating the semiconductor wafer in the carrier while a thickness of the semiconductor wafer is set to be larger than a thickness of the carrier by 0 μm to 5 μm; and polishing the semiconductor wafer while feeding a polishing slurry to between the surfaces of the semiconductor wafer and surfaces of the press platens. In the polishing, an allowance of both surfaces of the semiconductor wafer is set at 5 μm or less in total.

摘要翻译： 在制造半导体晶片的方法中，用双面抛光机同时对半导体晶片的前面和后表面进行抛光，所述双面抛光机包括：用于容纳半导体晶片的载体; 以及用于夹持载体的上压板和下压板。 该方法包括：将半导体晶片容纳在载体中，同时将半导体晶片的厚度设定为大于载体厚度0μm至5μm; 并且在将半导体晶片的表面和压板的表面之间进行抛光浆料的同时抛光半导体晶片。 在研磨中，半导体晶片的两面的余量总计为5μm以下。