发明授权
- 专利标题: Methods of manufacturing phase-change memory devices
- 专利标题(中): 制造相变存储器件的方法
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申请号: US13469498申请日: 2012-05-11
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公开(公告)号: US08551805B2公开(公告)日: 2013-10-08
- 发明人: Gyu-Hwan Oh , Doo-Hwan Park , Kyung-Min Chung
- 申请人: Gyu-Hwan Oh , Doo-Hwan Park , Kyung-Min Chung
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2011-0046420 20110517
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/44 ; H01L21/4763 ; H01L21/302 ; H01L21/461 ; H01L41/00
摘要:
A phase-change memory device includes a word line on a substrate and a phase-change memory cell on the word line and comprising a phase-change material pattern. The device also includes a non-uniform conductivity layer pattern comprising a conductive region on the phase-change material pattern and a non-conductive region contiguous therewith. The device further includes a bit line on the conductive region of the non-uniform conductivity layer pattern. In some embodiments, the phase-change memory cell may further include a diode on the word line, a heating electrode on the diode and wherein the phase-change material layer is disposed on the heating electrode. An ohmic contact layer and a contact plug may be disposed between the diode and the heating electrode.
公开/授权文献
- US20120322223A1 METHODS OF MANUFACTURING PHASE-CHANGE MEMORY DEVICES 公开/授权日:2012-12-20