发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13488958申请日： 2012-06-05
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公开(公告)号： US08552529B2公开(公告)日： 2013-10-08
- 发明人: Jung-Chih Tsao , Yu-Sheng Wang , Kei-Wei Chen , Ying-Lang Wang
- 申请人： Jung-Chih Tsao , Yu-Sheng Wang , Kei-Wei Chen , Ying-Lang Wang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： McClure, Qualey & Rodack, LLP
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A semiconductor device is disclosed. The device includes a substrate; a first metal layer overlying the substrate; a dielectric layer overlying the first metal layer; and a second metal layer overlying the dielectric layer, wherein the first metal layer comprises: a first body-centered cubic lattice metal layer; a first underlayer, underlying the first body-centered cubic lattice metal layer, wherein the first underlayer is metal of body-centered cubic lattice and includes titanium (Ti), tungsten (W), molybdenum (Mo) or niobium (Nb); and a first interface of body-centered cubic lattice between the first body-centered cubic lattice metal layer and the first underlayer.
公开/授权文献
- US20120241908A1 SEMICONDUCTOR DEVICE 公开/授权日：2012-09-27
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