发明授权
- 专利标题： ALD of metal silicate films
- 专利标题（中）： 金属硅酸盐膜的ALD
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申请号： US13175204申请日： 2011-07-01
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公开(公告)号： US08563444B2公开(公告)日： 2013-10-22
- 发明人: Chang-Gong Wang , Eric Shero , Glen Wilk
- 申请人： Chang-Gong Wang , Eric Shero , Glen Wilk
- 申请人地址： US AZ Phoenix
- 专利权人： ASM America, Inc.
- 当前专利权人： ASM America, Inc.
- 当前专利权人地址： US AZ Phoenix
- 代理机构： Knobbe, Martens, Olson & Bear, LLP
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.
公开/授权文献
- US20110256735A1 ALD OF METAL SILICATE FILMS 公开/授权日：2011-10-20
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