公开(公告)号：US09359672B2

公开(公告)日：2016-06-07

申请号：US13529223

申请日：2012-06-21

申请人： Mohith Verghese ,  Kyle Fondurulia ,  Carl White ,  Eric Shero ,  Darko Babic ,  Herbert Terhorst ,  Marko Peussa ,  Min Yan

发明人： Mohith Verghese ,  Kyle Fondurulia ,  Carl White ,  Eric Shero ,  Darko Babic ,  Herbert Terhorst ,  Marko Peussa ,  Min Yan

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/44 ,  C30B35/00 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/68785 ,  C23C16/4408 ,  C23C16/455 ,  C23C16/45517 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45582 ,  C23C16/45587 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4586 ,  C30B35/00 ,  H01L21/67236 ,  H01L21/68714 ,  H01L21/68742

摘要： An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

公开(公告)号：US09202727B2

公开(公告)日：2015-12-01

申请号：US13411271

申请日：2012-03-02

申请人： Todd Dunn ,  Carl White ,  Michael Halpin ,  Eric Shero ,  Jerry Winkler

发明人： Todd Dunn ,  Carl White ,  Michael Halpin ,  Eric Shero ,  Jerry Winkler

IPC分类号： F27D5/00 ,  H01L21/67 ,  F27B17/00 ,  F27D3/00 ,  H01L21/687

CPC分类号： H01L21/67103 ,  F27B17/0025 ,  F27D3/0084 ,  F27D5/0037 ,  H01L21/68785

摘要： A substrate supporting assembly in a reaction space includes a heater, a substrate support member, and a shim positioned between the heater and the substrate support member. The shim may be removably secured between the heater and the substrate support member. The shim may further include an inner surface defining a perimeter of a gap. The gap may be further defined by a bottom surface of the substrate support member and a top surface of the heater. The substrate support member may further include a shoulder positioned radially outside of a substrate support position and wherein the shim inner surface is radially aligned with the substrate support member shoulder.

摘要翻译： 反应空间中的基板支撑组件包括加热器，基板支撑构件和位于加热器和基板支撑构件之间的垫片。 垫片可以可拆卸地固定在加热器和衬底支撑构件之间。 垫片还可包括限定间隙周长的内表面。 间隙可以由衬底支撑构件的底表面和加热器的顶表面进一步限定。 衬底支撑构件还可以包括位于衬底支撑位置的径向外侧的肩部，并且其中垫片内表面与衬底支撑构件肩部径向对准。

公开(公告)号：US09017481B1

公开(公告)日：2015-04-28

申请号：US13284642

申请日：2011-10-28

申请人： Fred Pettinger ,  Carl White ,  Dave Marquardt ,  Sokol Ibrani ,  Eric Shero ,  Todd Dunn ,  Kyle Fondurulia ,  Mike Halpin

发明人： Fred Pettinger ,  Carl White ,  Dave Marquardt ,  Sokol Ibrani ,  Eric Shero ,  Todd Dunn ,  Kyle Fondurulia ,  Mike Halpin

IPC分类号： C23C16/455 ,  C23C16/44 ,  H01J37/32

CPC分类号： H01L21/02104 ,  C23C16/4409 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32532

摘要： Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

摘要翻译： 提供了与管理半导体工艺模块的工艺进料条件有关的实施例。 在一个示例中，提供了一种用于半导体处理模块的气体通道板。 示例性气体通道板包括热交换表面，其包括通过中间间隔彼此分离的多个热交换结构。 示例性气体通道板还包括热交换流体引导板支撑表面，用于在多个热交换结构之上支撑热交换流体导向板，使得多个热交换结构的至少一部分与热交换流体间隔开 导演板。

公开(公告)号：US20130230814A1

公开(公告)日：2013-09-05

申请号：US13411271

申请日：2012-03-02

申请人： Todd Dunn ,  Carl White ,  Michael Halpin ,  Eric Shero ,  Jerry Winkler

发明人： Todd Dunn ,  Carl White ,  Michael Halpin ,  Eric Shero ,  Jerry Winkler

IPC分类号： F27D3/00 ,  F27D5/00

CPC分类号： H01L21/67103 ,  F27B17/0025 ,  F27D3/0084 ,  F27D5/0037 ,  H01L21/68785

摘要： A substrate supporting assembly in a reaction space includes a heater, a substrate support member, and a shim positioned between the heater and the substrate support member. The shim may be removably secured between the heater and the substrate support member. The shim may further include an inner surface defining a perimeter of a gap. The gap may be further defined by a bottom surface of the substrate support member and a top surface of the heater. The substrate support member may further include a shoulder positioned radially outside of a substrate support position and wherein the shim inner surface is radially aligned with the substrate support member shoulder.

摘要翻译： 反应空间中的基板支撑组件包括加热器，基板支撑构件和位于加热器和基板支撑构件之间的垫片。 垫片可以可拆卸地固定在加热器和衬底支撑构件之间。 垫片还可包括限定间隙周长的内表面。 间隙可以由衬底支撑构件的底表面和加热器的顶表面进一步限定。 衬底支撑构件还可以包括位于衬底支撑位置的径向外侧的肩部，并且其中垫片内表面与衬底支撑构件肩部径向对准。

公开(公告)号：US08293658B2

公开(公告)日：2012-10-23

申请号：US12707065

申请日：2010-02-17

申请人： Eric Shero ,  Mohith Verghese ,  Anthony Muscat ,  Shawn Miller

发明人： Eric Shero ,  Mohith Verghese ,  Anthony Muscat ,  Shawn Miller

IPC分类号： H01L21/31

CPC分类号： C23C16/45525 ,  B05D1/32 ,  B05D1/60 ,  B05D5/08 ,  B82Y30/00 ,  C23C16/04 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28194 ,  H01L29/517

摘要： Methods and structures relating to the formation of mixed SAMs for preventing undesirable growth or nucleation on exposed surfaces inside a reactor are described. A mixed SAM can be formed on surfaces for which nucleation is not desired by introducing a first SAM precursor having molecules of a first length and a second SAM precursor having molecules of a second length shorter than the first. Examples of exposed surfaces for which a mixed SAM can be provided over include reactor surfaces and select surfaces of integrated circuit structures, such as insulator and dielectric layers.

摘要翻译： 描述了与形成用于防止反应器内的暴露表面上的不期望的生长或成核的混合SAM相关的方法和结构。 可以通过引入具有第一长度的分子的第一SAM前体和具有比第一长度短的分子的第二SAM前体，在不需要成核的表面上形成混合的SAM。 可以提供混合SAM的暴露表面的实例包括反应器表面和诸如绝缘体和电介质层的集成电路结构的选择表面。

公开(公告)号：US20100322604A1

公开(公告)日：2010-12-23

申请号：US12763037

申请日：2010-04-19

申请人： Kyle Fondurulia ,  Eric Shero ,  Mohith E. Verghese ,  Carl L. White

发明人： Kyle Fondurulia ,  Eric Shero ,  Mohith E. Verghese ,  Carl L. White

IPC分类号： F24H1/20

CPC分类号： C23C16/4481

摘要： A precursor source vessel for providing vaporized precursor to a reaction chamber is provided. The precursor source vessel includes a lid having a first port, a second port, and a third port. The precursor source vessel also includes a base removably attached to the lid. The base includes a recessed region formed therein. One of the first, second, and third ports is a burp port configured to relieve the head pressure within the source vessel after the source vessel is installed but prior to use of the source vessel in semiconductor processing.

摘要翻译： 提供了一种用于向反应室提供蒸发的前体的前体源容器。 前体源容器包括具有第一端口，第二端口和第三端口的盖。 前体源容器还包括可移除地附接到盖的基座。 底座包括形成在其中的凹陷区域。 第一，第二和第三端口之一是打孔口，其构造成在源容器安装之后但在半导体加工中使用源容器之前减轻源容器内的头部压力。

公开(公告)号：US20060216419A1

公开(公告)日：2006-09-28

申请号：US11442364

申请日：2006-05-25

申请人： Eric Shero ,  Michael Givens ,  Ryan Schmidt

发明人： Eric Shero ,  Michael Givens ,  Ryan Schmidt

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/4481 ,  C23C16/4483

摘要： Preferred embodiments of the present invention provides a sublimation system employing guidance structures including certain preferred embodiments having a high surface area support medium onto which a solid source material for vapor reactant is coated. Preferably, a guidance structure is configured to facilitate the repeated saturation of the carrier gas with the solid source for a vapor reactant. Methods of saturating a carrier gas using guidance structures are also provided.

公开(公告)号：US20060205230A1

公开(公告)日：2006-09-14

申请号：US11431037

申请日：2006-05-09

申请人： Christophe Pomarede ,  Jeff Roberts ,  Eric Shero

发明人： Christophe Pomarede ,  Jeff Roberts ,  Eric Shero

IPC分类号： H01L21/31 ,  H01L21/324

CPC分类号： H01L21/28185 ,  C23C16/0218 ,  C23C16/0245 ,  C23C16/22 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/28017 ,  H01L21/28035 ,  H01L21/2807 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/3162 ,  H01L21/32055 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g. atomic layer deposition or ALD). Prior to depositing, the surface is treated with non-depositing plasma products. The treated surface more readily nucleates polysilicon and poly-SiGe (such as for a gate electrode), or more readily adsorbs ALD reactants (such as for a gate dielectric). The surface treatment provides surface moieties more readily susceptible to a subsequent deposition reaction, or more readily susceptible to further surface treatment prior to deposition. By changing the surface termination of the substrate with a low temperature radical treatment, subsequent deposition is advantageously facilitated without depositing a layer of any appreciable thickness and without significantly affecting the bulk properties of the underlying material. Preferably less than 10 Å of the bulk material incorporates the excited species, which can include fluorine, chlorine and particularly nitrogen excited species.

公开(公告)号：US20050072357A1

公开(公告)日：2005-04-07

申请号：US10629029

申请日：2003-07-29

申请人： Eric Shero ,  Michael Givens ,  Ryan Schmidt

发明人： Eric Shero ,  Michael Givens ,  Ryan Schmidt

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  H01L21/31 ,  B05C5/02 ,  B05B5/12

CPC分类号： C23C16/45544 ,  C23C16/4481 ,  C23C16/4483

摘要： Preferred embodiments of the present invention provides a sublimation system employing guidance structures including certain preferred embodiments having a high surface area support medium onto which a solid source material for vapor reactant is coated. Preferably, a guidance structure is configured to facilitate the repeated saturation of the carrier gas with the solid source for a vapor reactant. Methods of saturating a carrier gas using guidance structures are also provided.

摘要翻译： 本发明的优选实施方案提供了采用引导结构的升华系统，其包括具有高表面积支持介质的某些优选实施方案，在其上涂覆用于蒸汽反应物的固体源材料。 优选地，引导结构被配置为促进载气与用于蒸汽反应物的固体源的反复饱和。 还提供了使用引导结构使载气饱和的方法。

公开(公告)号：US09238865B2

公开(公告)日：2016-01-19

申请号：US13367010

申请日：2012-02-06

申请人： Christophe Pomarede ,  Eric Shero ,  Mohith Verghese ,  Jan Willem Maes ,  Chang-Gong Wang

发明人： Christophe Pomarede ,  Eric Shero ,  Mohith Verghese ,  Jan Willem Maes ,  Chang-Gong Wang

IPC分类号： C23C14/24 ,  C23C16/04 ,  C23C16/448 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/28

CPC分类号： C23C16/45525 ,  C23C14/246 ,  C23C16/045 ,  C23C16/448 ,  C23C16/4482 ,  C23C16/4485 ,  C23C16/4486 ,  C23C16/45527 ,  C23C16/45561 ,  C23C16/52 ,  F17C2205/0142 ,  F17C2205/0146 ,  F17C2270/0518 ,  H01J37/32449 ,  H01L21/02148 ,  H01L21/02172 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3142 ,  H01L21/31645 ,  H01L27/10861

摘要： A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical.

摘要翻译： 一种气相沉积方法和装置，包括至少两个含有相同的第一源化学物质的容器。 控制器被编程为同时脉冲到来自容器的气体的反应空间剂量或脉冲，每个剂量具有基本上一致的第一源化学品浓度。 该装置还可以包括含有相同的第二源化学品的至少两个容器。 控制器可被编程为同时脉冲到来自含有第二源化学物质的容器的反应空间剂量或脉冲，每个剂量具有基本一致的第二源化学品浓度。 在反应空间被清除过量的第一源化学品之后，第二源化学品可以被脉冲到反应空间。