发明授权
- 专利标题： Reducing effects of erase disturb in a memory device
- 专利标题（中）： 减少存储器件中擦除干扰的影响
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申请号： US13486028申请日： 2012-06-01
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公开(公告)号： US08565018B2公开(公告)日： 2013-10-22
- 发明人: Akira Goda , Alessandro Torsi , Carlo Musilli , Mark A. Helm , Doyle Rivers
- 申请人： Akira Goda , Alessandro Torsi , Carlo Musilli , Mark A. Helm , Doyle Rivers
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Leffert Jay & Polglaze, P.A.
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A method for programming includes initially biasing a subset of a plurality of control gates of a string of memory cells with a negative voltage, wherein the subset is less than all of the plurality of control gates of the string. The control gate of a selected memory cell is subsequently biased with a programming voltage during a programming phase.
公开/授权文献
- US20120236640A1 REDUCING EFFECTS OF ERASE DISTURB IN A MEMORY DEVICE 公开/授权日：2012-09-20
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