Invention Grant
- Patent Title: Isolation structure for strained channel transistors
- Patent Title (中): 应变通道晶体管的隔离结构
-
Application No.: US13013296Application Date: 2011-01-25
-
Publication No.: US08569146B2Publication Date: 2013-10-29
- Inventor: Chih-Hsin Ko , Yee-Chia Yeo , Wen-Chin Lee , Chung-Hu Ge
- Applicant: Chih-Hsin Ko , Yee-Chia Yeo , Wen-Chin Lee , Chung-Hu Ge
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Agent Steven E. Koffs
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method and system is disclosed for forming an improved isolation structure for strained channel transistors. In one example, an isolation structure is formed comprising a trench filled with a nitrogen-containing liner and a gap filler. The nitrogen-containing liner enables the isolation structure to reduce compressive strain contribution to the channel region.
Public/Granted literature
- US20110117724A1 ISOLATION STRUCTURE FOR STRAINED CHANNEL TRANSISTORS Public/Granted day:2011-05-19
Information query
IPC分类:
