Invention Grant
- Patent Title: Plasma processing method and plasma processing apparatus
- Patent Title (中): 等离子体处理方法和等离子体处理装置
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Application No.: US13195925Application Date: 2011-08-02
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Publication No.: US08569178B2Publication Date: 2013-10-29
- Inventor: Masanori Hosoya , Masahiro Ito , Ryoichi Yoshida
- Applicant: Masanori Hosoya , Masahiro Ito , Ryoichi Yoshida
- Applicant Address: JP
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP
- Agency: Cantor Colburn LLP
- Priority: JP2010-174149 20100803
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A plasma processing method includes: etching an anti reflection coating film with plasma generated from an etching gas by using a resist film that is patterned as a mask, in a deposited film in which an Si-ARC film constituting the anti reflection coating film is formed on a layer to be etched and the ArF resist film is formed on the anti reflection coating film; and modifying the ArF resist film with plasma generated from a modifying gas including a CF4 gas, a COS gas and an Ar gas by introducing the modifying gas into a plasma processing apparatus, wherein the modifying is performed before the etching.
Public/Granted literature
- US20120031875A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS Public/Granted day:2012-02-09
Information query
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