发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13010417申请日： 2011-01-20
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公开(公告)号： US08569839B2公开(公告)日： 2013-10-29
- 发明人: Katsumi Morii , Yoshitaka Otsu , Kazuma Onishi , Tetsuya Nitta , Tatsuya Shiromoto , Shigeo Tokumitsu
- 申请人： Katsumi Morii , Yoshitaka Otsu , Kazuma Onishi , Tetsuya Nitta , Tatsuya Shiromoto , Shigeo Tokumitsu
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2010-010085 20100120
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/70
摘要：
To provide a semiconductor device that can be manufactured using a simple process without ensuring a high embedding property; and a manufacturing method of the device. In the manufacturing method of the semiconductor device according to the invention, a semiconductor substrate having a configuration obtained by stacking a support substrate, a buried insulating film, and a semiconductor layer in order of mention is prepared first. Then, an element having a conductive portion is completed over the main surface of the semiconductor layer. A trench encompassing the element in a planar view and reaching the buried insulating film from the main surface of the semiconductor layer is formed. A first insulating film (interlayer insulating film) is formed over the element and in the trench to cover the element and form an air gap in the trench, respectively. Then, a contact hole reaching the conductive portion of the element is formed in the first insulating film.
公开/授权文献
- US20110175205A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2011-07-21
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