发明授权
- 专利标题： MOS devices with improved source/drain regions with SiGe
- 专利标题（中）： 具有SiGe源极/漏极区域改善的MOS器件
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申请号： US13166481申请日： 2011-06-22
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公开(公告)号： US08569846B2公开(公告)日： 2013-10-29
- 发明人: Chun-Chieh Lin , Wei-Hua Hsu , Yu-En Percy Chang , Chung Li Chang , Chi-Feng Cheng , Win Hung , Kishimoto Ko
- 申请人： Chun-Chieh Lin , Wei-Hua Hsu , Yu-En Percy Chang , Chung Li Chang , Chi-Feng Cheng , Win Hung , Kishimoto Ko
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A method includes forming a gate stack over a semiconductor substrate, and forming a first silicon germanium (SiGe) region in the semiconductor substrate and adjacent the gate stack. The first SiGe region has a first atomic percentage of germanium to germanium and silicon. A second SiGe region is formed over the first SiGe region. The second SiGe region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is lower than the first atomic percentage, wherein the first and the second SiGe regions form a source/drain stressor of a metal-oxide-semiconductor (MOS) device.
公开/授权文献
- US20110256681A1 MOS Devices with Improved Source/Drain Regions with SiGe 公开/授权日：2011-10-20
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