发明授权
US08573153B2 Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode
有权
用于半导体处理等离子体反应器的多部分电极和替换多部分电极的一部分的方法
- 专利标题: Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode
- 专利标题(中): 用于半导体处理等离子体反应器的多部分电极和替换多部分电极的一部分的方法
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申请号: US12954060申请日: 2010-11-24
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公开(公告)号: US08573153B2公开(公告)日: 2013-11-05
- 发明人: Andreas Fischer , William S. Kennedy , Peter Loewenhardt , David Trussell
- 申请人: Andreas Fischer , William S. Kennedy , Peter Loewenhardt , David Trussell
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: Buchanan Ingersoll & Rooney PC
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; H01L21/00
摘要:
An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.
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