Invention Grant
- Patent Title: Substrate processing including a masking layer
- Patent Title (中): 衬底处理包括掩模层
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Application No.: US13829290Application Date: 2013-03-14
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Publication No.: US08575021B2Publication Date: 2013-11-05
- Inventor: Thomas R. Boussie , Tony P. Chiang , Anh Duong , Zachary Fresco , Nitin Kumar , Chi-I Lang , Sandra G. Malhotra , Jinhong Tong
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/312 ; H01L21/32
Abstract:
Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.
Public/Granted literature
- US20130217238A1 Substrate Processing Including A Masking Layer Public/Granted day:2013-08-22
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