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    Formation of a Masking Layer on a Dielectric Region to Facilitate Formation of a Capping Layer on Electrically Conductive Regions Separated by the Dielectric Region
    7.
    发明申请
    Formation of a Masking Layer on a Dielectric Region to Facilitate Formation of a Capping Layer on Electrically Conductive Regions Separated by the Dielectric Region 有权
    在介电区域上形成掩模层，以便在由介电区域分离的导电区域上形成覆盖层

    公开(公告)号：US20140227871A1

    公开(公告)日：2014-08-14

    申请号：US14257694

    申请日：2014-04-21

    申请人： Intermolecular, Inc.

    发明人： Thomas R. Boussie ,  David E. Lazovsky ,  Sandra G. Malhotra

    IPC分类号： H01L21/768

    CPC分类号： H01L21/7685 ,  B82Y30/00 ,  H01L21/02118 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/288 ,  H01L21/31 ,  H01L21/76834

    摘要： A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions of the electronic device that are separated by the dielectric region, the masking layer inhibits formation of capping layer material on or in the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case, capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, can be used to form the masking layer. The capping layer can be formed of an conductive material, a semiconductor material, or an insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.

    摘要翻译： 在电子器件的电介质区域上形成掩模层，使得在随后在由电介质区域分离的电子器件的导电区域上形成覆盖层时，掩模层阻止在其上形成覆盖层材料 在电介质区域。 可以选择性地在导电区域或非选择性地形成覆盖层; 在任一种情况下，形成在电介质区域上的覆盖层材料随后可以被去除，从而确保覆盖层材料仅在导电区域上形成。 硅烷类材料可用于形成掩模层。 覆盖层可以由导电材料，半导体材料或绝缘材料形成，并且可以使用包括常规沉积工艺如无电沉积，化学气相沉积，物理气相沉积或原子层沉积的任何适当的工艺形成。

    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
    8.
    发明授权
    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region 有权
    在电介质区域上形成掩模层，以便在由电介质区域分隔的导电区域上形成覆盖层

    公开(公告)号：US08575036B2

    公开(公告)日：2013-11-05

    申请号：US13676981

    申请日：2012-11-14

    申请人： Intermolecular, Inc.

    发明人： David E. Lazovsky ,  Thomas R. Boussie ,  Sandra G. Malhotra

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76829 ,  B82Y30/00 ,  H01L21/02183 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/3185 ,  H01L21/76826 ,  H01L21/76849

    摘要： A masking layer is formed on a dielectric region of an electronic device so that, during formation of a capping layer on electrically conductive regions that are separated by the dielectric region, the masking layer inhibits formation of capping layer material on or in the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; capping layer material formed over the dielectric region can be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive material a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.

    摘要翻译： 在电子器件的电介质区域上形成掩模层，使得在由电介质区域分离的导电区域上形成覆盖层时，掩模层阻止在电介质区域上或电介质区域中形成覆盖层材料。 可以选择性地在导电区域或非选择性地形成覆盖层; 可以去除在电介质区域上形成的覆盖层材料，从而确保仅在导电区域上形成覆盖层材料。 可以使用诸如硅烷基SAM之类的硅烷基材料来形成掩模层。 覆盖层可以由半导体材料或电绝缘材料的导电材料形成，并且可以使用任何适当的工艺形成，包括常规沉积工艺，例如无电沉积，化学气相沉积，物理气相沉积或原子层沉积 。

    Formation of a Masking Layer on a Dielectric Region to Facilitate Formation of a Capping Layer on Electrically Conductive Regions Separated by the Dielectric Region
    10.
    发明申请
    Formation of a Masking Layer on a Dielectric Region to Facilitate Formation of a Capping Layer on Electrically Conductive Regions Separated by the Dielectric Region 有权
    在介电区域上形成掩模层，以便在由介电区域分离的导电区域上形成覆盖层

    公开(公告)号：US20130072026A1

    公开(公告)日：2013-03-21

    申请号：US13676981

    申请日：2012-11-14

    申请人： INTERMOLECULAR, INC.

    发明人： David E. Lazovsky ,  Thomas R. Boussie ,  Sandra G. Malhotra

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76829 ,  B82Y30/00 ,  H01L21/02183 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/3185 ,  H01L21/76826 ,  H01L21/76849

    摘要： A masking layer is formed on a dielectric region of an electronic device so that, during formation of a capping layer on electrically conductive regions that are separated by the dielectric region, the masking layer inhibits formation of capping layer material on or in the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; capping layer material formed over the dielectric region can be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive material a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.

    摘要翻译： 在电子器件的电介质区域上形成掩模层，使得在由电介质区域分离的导电区域上形成覆盖层时，掩模层阻止在电介质区域上或电介质区域中形成覆盖层材料。 可以选择性地在导电区域或非选择性地形成覆盖层; 可以去除在电介质区域上形成的覆盖层材料，从而确保仅在导电区域上形成覆盖层材料。 可以使用诸如硅烷基SAM之类的硅烷基材料来形成掩模层。 覆盖层可以由半导体材料或电绝缘材料的导电材料形成，并且可以使用任何适当的工艺形成，包括常规沉积工艺，例如无电沉积，化学气相沉积，物理气相沉积或原子层沉积 。