发明授权
- 专利标题： Dual-gate normally-off nitride transistors
- 专利标题（中）： 双栅极常关氮化物晶体管
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申请号： US13557414申请日： 2012-07-25
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公开(公告)号： US08587031B2公开(公告)日： 2013-11-19
- 发明人: Bin Lu , Tomas Palacios
- 申请人： Bin Lu , Tomas Palacios
- 申请人地址： US MA Cambridge
- 专利权人： Massachusetts Institute of Technology
- 当前专利权人： Massachusetts Institute of Technology
- 当前专利权人地址： US MA Cambridge
- 代理机构： Gesmer Updegrove LLP
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A dual-gate normally-off nitride transistor that includes a first gate structure formed between a source electrode and a drain electrode for controlling a normally-off channel region of the dual-gate normally-off nitride transistor. A second gate structure is formed between the first gate structure and the drain electrode for modulating a normally-on channel region underneath the second gate structure. The magnitude of the threshold voltage of the second gate structure is smaller than the drain breakdown of the first gate structure for proper operation of the dual-gate normally-off nitride transistor.
公开/授权文献
- US20130020614A1 DUAL-GATE NORMALLY-OFF NITRIDE TRANSISTORS 公开/授权日：2013-01-24