Invention Grant
US08592102B2 Cost-effective method for extreme ultraviolet (EUV) mask production
有权
用于极紫外(EUV)掩模生产的成本效益高的方法
- Patent Title: Cost-effective method for extreme ultraviolet (EUV) mask production
- Patent Title (中): 用于极紫外(EUV)掩模生产的成本效益高的方法
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Application No.: US12650985Application Date: 2009-12-31
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Publication No.: US08592102B2Publication Date: 2013-11-26
- Inventor: Chin-Hsiang Lin , Heng-Jen Lee , I-Hsiung Huang , Chih-Chiang Tu , Chun-Jen Chen , Rick Lai
- Applicant: Chin-Hsiang Lin , Heng-Jen Lee , I-Hsiung Huang , Chih-Chiang Tu , Chun-Jen Chen , Rick Lai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/72 ; G03F1/84

Abstract:
The present disclosure provides for many different embodiments. An exemplary method can include providing a blank mask and a design layout to be patterned on the blank mask, the design layout including a critical area; inspecting the blank mask for defects and generating a defect distribution map associated with the blank mask; mapping the defect distribution map to the design layout; performing a mask making process; and performing a mask defect repair process based on the mapping.
Public/Granted literature
- US20110159410A1 COST-EFFECTIVE METHOD FOR EXTREME ULTRAVIOLET (EUV) MASK PRODUCTION Public/Granted day:2011-06-30
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