发明授权
US08592293B2 Schottky barrier diodes for millimeter wave SiGe BiCMOS applications
有权
用于毫米波SiGe BiCMOS应用的肖特基势垒二极管
- 专利标题: Schottky barrier diodes for millimeter wave SiGe BiCMOS applications
- 专利标题(中): 用于毫米波SiGe BiCMOS应用的肖特基势垒二极管
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申请号: US13028673申请日: 2011-02-16
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公开(公告)号: US08592293B2公开(公告)日: 2013-11-26
- 发明人: Jeffrey B. Johnson , Xuefeng Liu , Bradley A. Orner , Robert M. Rassel
- 申请人: Jeffrey B. Johnson , Xuefeng Liu , Bradley A. Orner , Robert M. Rassel
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Anthony Canale
- 主分类号: H01L21/28
- IPC分类号: H01L21/28
摘要:
A method for forming a Schottky barrier diode on a SiGe BiCMOS wafer, including forming a structure which provides a cutoff frequency (Fc) above about 1.0 THz. In embodiments, the structure which provides a cutoff frequency (Fc) above about 1.0 THz may include an anode having an anode area which provides a cutoff frequency (FC) above about 1.0 THz, an n-epitaxial layer having a thickness which provides a cutoff frequency (FC) above about 1.0 THz, a p-type guardring at an energy and dosage which provides a cutoff frequency (FC) above about 1.0 THz, the p-type guardring having a dimension which provides a cutoff frequency (FC) above about 1.0 THz, and a well tailor with an n-type dopant which provides a cutoff frequency (FC) above about 1.0 THz.
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