Invention Grant
- Patent Title: Manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
-
Application No.: US13726326Application Date: 2012-12-24
-
Publication No.: US08597989B2Publication Date: 2013-12-03
- Inventor: Makio Okada , Hidetoshi Kuraya , Toshio Tanabe , Yoshinori Fujisaki , Kotaro Arita
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2011-003560 20110112
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
The yield of semiconductor devices is improved. In an upper die of a resin molding die including a pair of the upper die and a lower die, by lengthening the radius of the cross section of an inner peripheral surface of a second corner part facing an injection gate of a cavity more than that of the other corner part, a void contained in a resin in resin injection can be pushed out into an air vent without allowing the void to remain in the second corner part of the cavity. Consequently, the occurrence of the void in the cavity can be prevented and then the occurrence of the appearance defect of the semiconductor device can be prevented.
Public/Granted literature
- US20130109138A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2013-05-02
Information query
IPC分类: