Invention Grant
US08608900B2 Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes
有权
具有前馈热控制系统的等离子体反应器,其使用用于适应RF功率变化或晶片温度变化的热模型
- Patent Title: Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes
- Patent Title (中): 具有前馈热控制系统的等离子体反应器,其使用用于适应RF功率变化或晶片温度变化的热模型
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Application No.: US11409183Application Date: 2006-04-21
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Publication No.: US08608900B2Publication Date: 2013-12-17
- Inventor: Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
- Applicant: Douglas A. Buchberger, Jr. , Paul Lukas Brillhart , Richard Fovell , Hamid Tavassoli , Douglas H. Burns , Kallol Bera , Daniel J. Hoffman
- Applicant Address: US FL Wellington US CA Santa Clara
- Assignee: B/E Aerospace, Inc.,Applied Materials, Inc.
- Current Assignee: B/E Aerospace, Inc.,Applied Materials, Inc.
- Current Assignee Address: US FL Wellington US CA Santa Clara
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; C23C16/52 ; C23C16/46 ; C23C16/458 ; C23C16/503 ; C23C16/509

Abstract:
A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.
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