发明授权
US08611143B2 Memory circuit using spin MOSFETs, path transistor circuit with memory function, switching box circuit, switching block circuit, and field programmable gate array
有权
使用自旋MOSFET的存储电路，具有存储功能的路径晶体管电路，开关盒电路，开关块电路和现场可编程门阵列
- 专利标题： Memory circuit using spin MOSFETs, path transistor circuit with memory function, switching box circuit, switching block circuit, and field programmable gate array
- 专利标题（中）： 使用自旋MOSFET的存储电路，具有存储功能的路径晶体管电路，开关盒电路，开关块电路和现场可编程门阵列
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申请号： US13403308申请日： 2012-02-23
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公开(公告)号： US08611143B2公开(公告)日： 2013-12-17
- 发明人: Hideyuki Sugiyama , Masato Oda , Shinobu Fujita , Tetsufumi Tanamoto , Mizue Ishikawa , Takao Marukame , Tomoaki Inokuchi , Yoshiaki Saito
- 申请人： Hideyuki Sugiyama , Masato Oda , Shinobu Fujita , Tetsufumi Tanamoto , Mizue Ishikawa , Takao Marukame , Tomoaki Inokuchi , Yoshiaki Saito
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-070860 20110328
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A memory circuit according to an embodiment includes: a first transistor including a first source/drain electrode, a second source/drain electrode, and a first gate electrode; a second transistor including a third source/drain electrode connected to the second source/drain electrode, a fourth source/drain electrode, and a second gate electrode; a third transistor and a fourth transistor forming an inverter circuit, the third transistor including a fifth source/drain electrode, a sixth source/drain electrode, and a third gate electrode connected to the second source/drain electrode, the fourth transistor including a seventh source/drain electrode connected to the sixth source/drain electrode, an eighth source/drain electrode, and a fourth gate electrode connected to the second source/drain electrode; and an output terminal connected to the sixth source/drain electrode. At least one of the third transistor and the fourth transistor is a spin MOSFET, and an output of the inverter circuit is sent from the output terminal.