Invention Grant
- Patent Title: Methods for forming fine patterns of a semiconductor device
- Patent Title (中): 用于形成半导体器件的精细图案的方法
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Application No.: US13733376Application Date: 2013-01-03
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Publication No.: US08614148B2Publication Date: 2013-12-24
- Inventor: Joon-Soo Park , Jongchul Park , Cheolhong Kim , Seokwoo Nam , Kukhan Yoon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0031881 20120328
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
A method may include forming first hard mask patterns and second hard mask patterns extending in a first direction and repeatedly and alternately arranged on a lower layer, forming third mask patterns extending in a second direction perpendicular to the first direction on the first and second hard mask patterns, etching the first hard mask patterns using the third mask patterns to form first openings, forming filling patterns filling the first openings and gap regions between the third mask patterns, forming spacers on both sidewalls of each of the filling patterns, after removing the third mask patterns, and etching the second hard mask patterns using the filling patterns and the spacers to form second openings.
Public/Granted literature
- US20130260562A1 METHODS FOR FORMING FINE PATTERNS OF A SEMICONDUCTOR DEVICE Public/Granted day:2013-10-03
Information query
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