发明授权
- 专利标题: Interconnect sensor for detecting delamination
- 专利标题(中): 用于检测分层的互连传感器
-
申请号: US12613444申请日: 2009-11-05
-
公开(公告)号: US08618539B2公开(公告)日: 2013-12-31
- 发明人: Brian Matthew Henderson , Shiqun Gu , Homyar C. Mogul , Mark M. Nakamoto , Arvind Chandrasekaran
- 申请人: Brian Matthew Henderson , Shiqun Gu , Homyar C. Mogul , Mark M. Nakamoto , Arvind Chandrasekaran
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理商 Michelle S. Gallardo
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
An interconnect sensor for detecting delamination due to coefficient of thermal expansion mismatch and/or mechanical stress. The sensor comprises a conductive path that includes a via disposed between two back end of line metal layers separated by a dielectric. The via is coupled between a first probe structure and a second probe structure and mechanically coupled to a stress inducing structure. The via is configured to alter the conductive path in response to mechanical stress caused by the stress inducing structure. The stress inducing structure can be a through silicon via or a solder ball. The dielectric material can be a low-k dielectric material. In another embodiment, a method of forming an interconnect sensor is provided for detecting delamination.
公开/授权文献
- US20110101347A1 Interconnect Sensor for Detecting Delamination 公开/授权日:2011-05-05