公开(公告)号：US08618539B2

公开(公告)日：2013-12-31

申请号：US12613444

申请日：2009-11-05

申请人： Brian Matthew Henderson ,  Shiqun Gu ,  Homyar C. Mogul ,  Mark M. Nakamoto ,  Arvind Chandrasekaran

发明人： Brian Matthew Henderson ,  Shiqun Gu ,  Homyar C. Mogul ,  Mark M. Nakamoto ,  Arvind Chandrasekaran

IPC分类号： H01L23/48

CPC分类号： H01L22/34 ,  G01N3/066 ,  G01N2203/0096

摘要： An interconnect sensor for detecting delamination due to coefficient of thermal expansion mismatch and/or mechanical stress. The sensor comprises a conductive path that includes a via disposed between two back end of line metal layers separated by a dielectric. The via is coupled between a first probe structure and a second probe structure and mechanically coupled to a stress inducing structure. The via is configured to alter the conductive path in response to mechanical stress caused by the stress inducing structure. The stress inducing structure can be a through silicon via or a solder ball. The dielectric material can be a low-k dielectric material. In another embodiment, a method of forming an interconnect sensor is provided for detecting delamination.

摘要翻译： 用于检测由于热膨胀失配系数和/或机械应力引起的分层的互连传感器。 该传感器包括导电路径，该导电路径包括通过电介质隔开的线金属层的两个后端之间的通孔。 通孔耦合在第一探针结构和第二探针结构之间，并机械耦合到应力诱导结构。 通孔配置成响应于由应力诱导结构引起的机械应力而改变导电路径。 应力诱导结构可以是硅通孔或焊球。 介电材料可以是低k电介质材料。 在另一个实施例中，提供形成互连传感器的方法用于检测分层。

公开(公告)号：US20110101347A1

公开(公告)日：2011-05-05

申请号：US12613444

申请日：2009-11-05

申请人： Brian Matthew Henderson ,  Shiqun Gu ,  Homyar C. Mogul ,  Mark M. Nakamoto ,  Arvind Chandrasekaran

发明人： Brian Matthew Henderson ,  Shiqun Gu ,  Homyar C. Mogul ,  Mark M. Nakamoto ,  Arvind Chandrasekaran

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L22/34 ,  G01N3/066 ,  G01N2203/0096

摘要： An interconnect sensor for detecting delamination due to coefficient of thermal expansion mismatch and/or mechanical stress. The sensor comprises a conductive path that includes a via disposed between two back end of line metal layers separated by a dielectric. The via is coupled between a first probe structure and a second probe structure and mechanically coupled to a stress inducing structure. The via is configured to alter the conductive path in response to mechanical stress caused by the stress inducing structure. The stress inducing structure can be a through silicon via or a solder ball. The dielectric material can be a low-k dielectric material. In another embodiment, a method of forming an interconnect sensor is provided for detecting delamination.

摘要翻译： 用于检测由于热膨胀失配系数和/或机械应力引起的分层的互连传感器。 该传感器包括导电路径，该导电路径包括通过电介质隔开的线金属层的两个后端之间的通孔。 通孔耦合在第一探针结构和第二探针结构之间，并机械耦合到应力诱导结构。 通孔配置成响应于由应力诱导结构引起的机械应力而改变导电路径。 应力诱导结构可以是硅通孔或焊球。 介电材料可以是低k电介质材料。 在另一个实施例中，提供形成互连传感器的方法用于检测分层。

公开(公告)号：US20120212245A1

公开(公告)日：2012-08-23

申请号：US13364091

申请日：2012-02-01

申请人： Angelo Pinto ,  Martin L. Villafana ,  You-Wen Yau ,  Homyar C. Mogul ,  Lavakumar Ranganathan ,  Rohan V. Gupte ,  Weijia Qi ,  Kent J. Pingrey ,  Carlos P. Aguilar ,  Paul J. Giotta ,  Leon Y. Leung ,  Jina M. Antosz ,  Bhupen M. Shah ,  Choh fei Yeap ,  Michael J. Campbell ,  Lawrence A. Elugbadebo ,  Allen A.B. Hogan

发明人： Angelo Pinto ,  Martin L. Villafana ,  You-Wen Yau ,  Homyar C. Mogul ,  Lavakumar Ranganathan ,  Rohan V. Gupte ,  Weijia Qi ,  Kent J. Pingrey ,  Carlos P. Aguilar ,  Paul J. Giotta ,  Leon Y. Leung ,  Jina M. Antosz ,  Bhupen M. Shah ,  Choh fei Yeap ,  Michael J. Campbell ,  Lawrence A. Elugbadebo ,  Allen A.B. Hogan

IPC分类号： G01R31/3187 ,  H01L23/58

CPC分类号： G01R31/1263 ,  G01R31/025 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit is disclosed. The integrated circuit includes an insulating material layer. The integrated circuit also includes a metal structure. Furthermore, the integrated circuit includes a via through the insulating material layer that is coupled to the metal structure for testing insulating material by applying dynamic voltage switching to two adjacent metal components of the metal structure.

摘要翻译： 公开了一种集成电路。 集成电路包括绝缘材料层。 集成电路还包括金属结构。 此外，集成电路包括通过绝缘材料层的通孔，其通过向金属结构的两个相邻金属部件施加动态电压切换而耦合到用于测试绝缘材料的金属结构。