发明授权
- 专利标题： Heterojunction III-V solar cell performance
- 专利标题（中）： 异质结III-V太阳能电池性能
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申请号： US13179731申请日： 2011-07-11
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公开(公告)号： US08624104B2公开(公告)日： 2014-01-07
- 发明人: Stephen W. Bedell , Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人： Stephen W. Bedell , Bahman Hekmatshoartabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Otterstedt, Ellenbogen & Kammer, LLP
- 代理商 Louis J. Percello
- 主分类号： H01L31/00
- IPC分类号： H01L31/00 ; H01L21/00
摘要：
An InxGa1-xAs interlayer is provided between a III-V base and an intrinsic amorphous semiconductor layer of a heterojunction III-V solar cell structure. Improved surface passivation and open circuit voltage may be obtained through the incorporation of the interlayer within the structure.
公开/授权文献
- US20130014811A1 HETEROJUNCTION III-V SOLAR CELL PERFORMANCE 公开/授权日：2013-01-17
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