发明授权
- 专利标题： Method for electron beam induced etching of layers contaminated with gallium
- 专利标题（中）： 电子束诱导蚀刻由镓污染的层的方法
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申请号： US13058635申请日： 2009-08-11
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公开(公告)号： US08632687B2公开(公告)日： 2014-01-21
- 发明人: Nicole Auth , Petra Spies , Rainer Becker , Thorsten Hofmann , Klaus Edinger
- 申请人： Nicole Auth , Petra Spies , Rainer Becker , Thorsten Hofmann , Klaus Edinger
- 申请人地址： DE Jena
- 专利权人： Carl Zeiss SMS GmbH
- 当前专利权人： Carl Zeiss SMS GmbH
- 当前专利权人地址： DE Jena
- 代理机构： Fish & Richardson P.C.
- 优先权： DE102008037951 20080814
- 国际申请： PCT/EP2009/005823 WO 20090811
- 国际公布： WO2010/017963 WO 20100218
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
The invention relates to a method for electron beam induced etching of a layer contaminated with gallium, with the method steps of providing at least one first halogenated compound as an etching gas at the position at which an electron beam impacts on the layer, and providing at least one second halogenated compound as a precursor gas for removing of the gallium from this position.
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