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19 条记录 (耗时 0.02 秒)

    APPARATUS AND METHOD FOR INVESTIGATING AND/OR MODIFYING A SAMPLE
    6.
    发明申请
    APPARATUS AND METHOD FOR INVESTIGATING AND/OR MODIFYING A SAMPLE 有权
    用于调查和/或修改样品的装置和方法

    公开(公告)号：US20110210181A1

    公开(公告)日：2011-09-01

    申请号：US12745059

    申请日：2010-05-27

    申请人： Klaus Edinger ,  Rainer Becker ,  Michael Budach ,  Thorsten Hofmann

    发明人： Klaus Edinger ,  Rainer Becker ,  Michael Budach ,  Thorsten Hofmann

    IPC分类号： B05B5/025

    CPC分类号： C23F4/00 ,  H01J37/3056 ,  H01J2237/28 ,  H01J2237/3174 ,  H01L21/76894 ,  H01L22/22 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An apparatus and a method for investigating and/or modifying a sample is disclosed. The apparatus comprises a charged particle source, at least one particle optical element forming a charged particle beam of charged particles emitted by said charged particle source. The apparatus further comprises an objective lens which generates a charged particle probe from said charged particle beam. The objective lens defines a particle optical axis. A first electrostatic deflection element is arranged—in a direction of propagation of charged particles emitted by said charged particle source—downstream of the objective lens. The electrostatic deflection element deflecting the charged particle beam in a direction perpendicular to said charged particle optical axis and has a deflection bandwidth of at least 10 MHz.

    摘要翻译： 公开了一种用于调查和/或修改样品的装置和方法。 所述装置包括带电粒子源，至少一个粒子光学元件，形成由所述带电粒子源发射的带电粒子的带电粒子束。 该装置还包括从所述带电粒子束产生带电粒子探针的物镜。 物镜定义了粒子光轴。 第一静电偏转元件布置在由物镜的下游的所述带电粒子源发射的带电粒子的传播方向上。 静电偏转元件使垂直于所述带电粒子光轴的方向偏转带电粒子束并具有至少10MHz的偏转带宽。

    METHOD FOR ELECTRON BEAM INDUCED ETCHING
    7.
    发明申请
    METHOD FOR ELECTRON BEAM INDUCED ETCHING 有权
    电子束诱导蚀刻的方法

    公开(公告)号：US20110183444A1

    公开(公告)日：2011-07-28

    申请号：US13058587

    申请日：2009-08-13

    申请人： Nicole Auth ,  Petra Spies ,  Rainer Becker ,  Thorsten Hofmann ,  Klaus Edinger

    发明人： Nicole Auth ,  Petra Spies ,  Rainer Becker ,  Thorsten Hofmann ,  Klaus Edinger

    IPC分类号： H01L21/66 ,  C23F1/08

    CPC分类号： H01L21/3065 ,  H01L21/31116 ,  H01L21/32136

    摘要： The invention relates to a method for electron beam induced etching of a material (100, 200) with the method steps providing at least one etching gas at a position of the material (100, 200) at which an electron beam impacts on the material (100, 200) and simultaneously providing at least one passivation gas which is adapted for slowing down or inhibiting a spontaneous etching by the at least one etching gas

    摘要翻译： 本发明涉及一种用于电子束感应蚀刻材料（100,200）的方法，该方法步骤在电子束撞击材料（100,200）的位置提供至少一种蚀刻气体（ 100,200），并且同时提供至少一个钝化气体，所述钝化气体适于减缓或抑制所述至少一种蚀刻气体的自发蚀刻

    Method for high-resolution processing of thin layers using electron beams
    8.
    发明授权
    Method for high-resolution processing of thin layers using electron beams 有权
    使用电子束对薄层进行高分辨率处理的方法

    公开(公告)号：US07786403B2

    公开(公告)日：2010-08-31

    申请号：US10927956

    申请日：2004-08-27

    申请人： Hans Koops ,  Klaus Edinger ,  Sergey Babin ,  Thorsten Hofmann ,  Petra Spies

    发明人： Hans Koops ,  Klaus Edinger ,  Sergey Babin ,  Thorsten Hofmann ,  Petra Spies

    IPC分类号： B23K15/00 ,  H01L21/302 ,  H01L21/461

    CPC分类号： G03F1/74 ,  C23F1/12 ,  H01J2237/31744 ,  H01L21/32135

    摘要： A method for etching a chromium layer in a vacuum chamber which may comprise introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and/or introducing an oxygen including compound into the vacuum chamber. A further method for the highly resolved removal of a layer out of metal and/or metal oxide which may be arranged on an isolator or a substrate having poor thermal conductivity, may comprise arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam may be guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer may be performed without the supply of reaction gases into the vacuum chamber.

    摘要翻译： 一种用于在真空室中蚀刻铬层的方法，其可以包括将卤素化合物引入真空室，将电子束引导到要蚀刻的铬层的区域和/或将含氧化合物引入真空室中。 用于高分辨率地去除可以布置在具有差热导率的隔离器或基板上的金属和/或金属氧化物层的另外的方法可以包括将层布置在真空室内，用聚焦的方式轰击该层 电子束的能量为3-30keV，其中电子束可被引导，使得每时间和面积的能量传递导致该层在其熔化和/或蒸发点之上的局部加热，并且其中该层的去除可以 在没有将反应气体供应到真空室中的情况下进行。

    Apparatus and method for investigating or modifying a surface with a beam of charged particles
    9.
    发明授权
    Apparatus and method for investigating or modifying a surface with a beam of charged particles 有权
    用带电粒子束调查或修改表面的装置和方法

    公开(公告)号：US07232997B2

    公开(公告)日：2007-06-19

    申请号：US11106368

    申请日：2005-04-14

    申请人： Klaus Edinger ,  Josef Sellmair ,  Thorsten Hofmann

    发明人： Klaus Edinger ,  Josef Sellmair ,  Thorsten Hofmann

    IPC分类号： G01N23/00

    CPC分类号： H01J37/026 ,  G01N23/2273 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/0044 ,  H01J2237/026

    摘要： An apparatus for investigating and/or modifying a sample with charged particles, in particular a scanning electron microscope, is provided. The apparatus comprises a beam (1, 2) of charged particles, a shielding element (10) having an opening (30) for the beam of charged particles to pass through, wherein the opening (30) is sufficiently small and the shielding element (10) sufficiently closely positioned to the surface (20) of the sample to reduce the influence of charge accumulation effects at the surface on the beam of charged particles.

    摘要翻译： 提供了一种用于研究和/或修饰具有带电粒子的样品的装置，特别是扫描电子显微镜。 该设备包括带电粒子的束（1,2），具有用于带电粒子束通过的开口（30）的屏蔽元件（10），其中开口（30）足够小并且屏蔽元件 10）足够紧密地定位于样品的表面（20），以减少带电粒子束上的表面处的电荷累积效应的影响。

    Method for high-resolution processing of thin layers using electron beams
    10.
    发明申请
    Method for high-resolution processing of thin layers using electron beams 有权
    使用电子束对薄层进行高分辨率处理的方法

    公开(公告)号：US20050087514A1

    公开(公告)日：2005-04-28

    申请号：US10927956

    申请日：2004-08-27

    申请人： Hans Koops ,  Klaus Edinger ,  Sergey Babin ,  Thorsten Hofmann ,  Petra Spies

    发明人： Hans Koops ,  Klaus Edinger ,  Sergey Babin ,  Thorsten Hofmann ,  Petra Spies

    IPC分类号： C23F1/12 ,  H01L21/3213 ,  C23F1/00

    CPC分类号： G03F1/74 ,  C23F1/12 ,  H01J2237/31744 ,  H01L21/32135

    摘要： A method for etching a chromium layer in a vacuum chamber which may comprise introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and/or introducing an oxygen including compound into the vacuum chamber. A further method for the highly resolved removal of a layer out of metal and/or metal oxide which may be arranged on an isolator or a substrate having poor thermal conductivity, may comprise arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam may be guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer may be performed without the supply of reaction gases into the vacuum chamber.

    摘要翻译： 一种用于在真空室中蚀刻铬层的方法，其可以包括将卤素化合物引入真空室，将电子束引导到要蚀刻的铬层的区域和/或将含氧化合物引入真空室中。 用于高分辨率地去除可以布置在具有差热导率的隔离器或基板上的金属和/或金属氧化物层的另外的方法可以包括将层布置在真空室内，用聚焦的方式轰击该层 电子束的能量为3-30keV，其中电子束可被引导，使得每时间和面积的能量传递导致该层在其熔化和/或蒸发点之上的局部加热，并且其中该层的去除可以 在没有将反应气体供应到真空室中的情况下进行。