发明授权
US08632930B2 Method and apparatus for performing dark field double dipole lithography (DDL)
有权
用于进行暗场双偶极子光刻(DDL)的方法和装置
- 专利标题: Method and apparatus for performing dark field double dipole lithography (DDL)
- 专利标题(中): 用于进行暗场双偶极子光刻(DDL)的方法和装置
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申请号: US13155259申请日: 2011-06-07
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公开(公告)号: US08632930B2公开(公告)日: 2014-01-21
- 发明人: Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
- 申请人: Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
- 申请人地址: NL Veldhoven
- 专利权人: ASML Masktools B.V.
- 当前专利权人: ASML Masktools B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 主分类号: G03F1/36
- IPC分类号: G03F1/36
摘要:
A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.
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