公开(公告)号：US08632930B2

公开(公告)日：2014-01-21

申请号：US13155259

申请日：2011-06-07

申请人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/36

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

摘要翻译： 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

公开(公告)号：US08629064B2

公开(公告)日：2014-01-14

申请号：US13167681

申请日：2011-06-23

申请人： Xiaoyang Li ,  Duan-Fu Stephen Hsu

发明人： Xiaoyang Li ,  Duan-Fu Stephen Hsu

IPC分类号： H01L21/311

CPC分类号： G03F1/36 ,  G03F7/70466 ,  G03F7/70633

摘要： The present invention relates to lithographic apparatuses and processes, and more particularly to multiple patterning lithography for printing target patterns beyond the limits of resolution of the lithographic apparatus. Self-aligned assist pattern (SAP) is derived from original design layout in an automated manner using geometric Boolean operations based on some predefined design rules, and are included in the mask layout for efficient self-alignment of various sub-layouts of the target pattern during a multiple patterning lithography process. SAP can be of any shape and size, and can have continuous features (e.g., a ring), or discontinuous (e.g., bars not connected to each other) features. An end-to-end multiple patterning lithography using spacer and SAP may use positive tone lithography, and/or negative tone lithography for line and/or space printing.

摘要翻译： 本发明涉及光刻设备和工艺，更具体地涉及用于将目标图案打印超出光刻设备的分辨率限制的多重图形化光刻技术。 自对准辅助图案（SAP）以原始设计布局从自动化方式导出，使用基于某些预定义设计规则的几何布尔运算，并且包括在掩模布局中以用于目标图案的各种子布局的有效自对准 在多重图案化光刻工艺期间。 SAP可以具有任何形状和尺寸，并且可以具有连续特征（例如，环）或不连续的（例如，彼此不连接的条）特征。 使用间隔物和SAP的端到端多重图案化光刻可以使用正色调光刻，和/或负色调光刻用于线和/或空间印刷。

公开(公告)号：US08122391B2

公开(公告)日：2012-02-21

申请号：US12691552

申请日：2010-01-21

申请人： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke

发明人： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/144 ,  G03F1/70 ,  G03F7/70466 ,  G06F2217/08 ,  G06F2217/12

摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process. The method includes the steps of: defining an initial H-mask corresponding to the target pattern; defining an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask having a width which is less than a predetermined critical width; identifying vertical critical features in the V-mask having a width which is less than a predetermined critical width; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask. The non-critical features are those features having a width which is greater than or equal to the predetermined critical width. The non-critical features are formed in the H-mask and the V-mask utilizing chrome. The target pattern is then imaged on the substrate by imaging both the H-mask and V-mask.

摘要翻译： 基于具有要在多曝光光刻成像处理中使用的基板上成像的特征的目标图案产生互补掩模的方法。 该方法包括以下步骤：定义对应于目标图案的初始H掩码; 定义对应于目标图案的初始V掩模; 识别具有小于预定临界宽度的宽度的H掩模中的水平临界特征; 识别具有小于预定临界宽度的宽度的V形掩模中的垂直关键特征; 将第一相移和第一百分比传输分配给​​要在H掩模中形成的水​​平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。 该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。 非关键特征是具有大于或等于预定临界宽度的宽度的那些特征。 非关键特征形成在H掩模和使用铬的V形掩模中。 然后通过成像H掩模和V掩模来将目标图案成像在衬底上。

公开(公告)号：US20110318927A1

公开(公告)日：2011-12-29

申请号：US13167681

申请日：2011-06-23

申请人： Xiaoyang Li ,  Duan-Fu Stephen Hsu

发明人： Xiaoyang Li ,  Duan-Fu Stephen Hsu

IPC分类号： H01L21/306 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F7/70466 ,  G03F7/70633

摘要： The present invention relates to lithographic apparatuses and processes, and more particularly to multiple patterning lithography for printing target patterns beyond the limits of resolution of the lithographic apparatus. Self-aligned assist pattern (SAP) is derived from original design layout in an automated manner using geometric Boolean operations based on some predefined design rules, and are included in the mask layout for efficient self-alignment of various sub-layouts of the target pattern during a multiple patterning lithography process. SAP can be of any shape and size, and can have continuous features (e.g., a ring), or discontinuous (e.g., bars not connected to each other) features. An end-to-end multiple patterning lithography using spacer and SAP may use positive tone lithography, and/or negative tone lithography for line and/or space printing.

摘要翻译： 本发明涉及光刻设备和工艺，更具体地涉及用于将目标图案打印超出光刻设备的分辨率限制的多重图形化光刻技术。 自对准辅助图案（SAP）以原始设计布局从自动化方式导出，使用基于某些预定义设计规则的几何布尔运算，并且包括在掩模布局中以用于目标图案的各种子布局的有效自对准 在多重图案化光刻工艺期间。 SAP可以具有任何形状和尺寸，并且可以具有连续特征（例如，环）或不连续的（例如，彼此不连接的条）特征。 使用间隔物和SAP的端到端多重图案化光刻可以使用正色调光刻，和/或负色调光刻用于线和/或空间印刷。

公开(公告)号：US07985515B2

公开(公告)日：2011-07-26

申请号：US12630280

申请日：2009-12-03

申请人： Duan-Fu Stephen Hsu ,  Kurt E. Wampler ,  Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Noel Corcoran

发明人： Duan-Fu Stephen Hsu ,  Kurt E. Wampler ,  Markus Franciscus Antonius Eurlings ,  Jang Fung Chen ,  Noel Corcoran

IPC分类号： G03F1/00

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70441 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.

摘要翻译： 一种产生用于多次曝光光刻成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有包括水平和垂直边缘的多个特征的目标图案; 基于目标图案生成水平掩模; 基于目标图案生成垂直掩模; 执行屏蔽步骤，其中目标图案中的多个特征的至少一个垂直边缘被水平掩模中的屏蔽替换，并且其中目标中的多个特征中的至少一个水平边缘 图案由垂直掩模中的屏蔽代替，其中屏蔽具有大于目标图案中相应特征的宽度的宽度; 执行辅助特征放置步骤，其中副分辨率辅助特征平行于水平掩模中的多个特征中的至少一个水平边缘设置，并且平行于多个垂直边缘中的至少一个垂直边缘 特征，并且执行特征偏置步骤，其中水平掩模中的多个特征的水平边缘中的至少一个被调整，使得所得到的特征精确地再现目标图案，并且垂直屏蔽中的至少一个垂直 调整垂直掩模中的多个特征的边缘，使得所得到的特征精确地再现目标图案。

公开(公告)号：US20100221669A1

公开(公告)日：2010-09-02

申请号：US12691552

申请日：2010-01-21

申请人： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van der Broeke

发明人： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van der Broeke

IPC分类号： G03F7/20 ,  G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/144 ,  G03F1/70 ,  G03F7/70466 ,  G06F2217/08 ,  G06F2217/12

摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process. The method includes the steps of: defining an initial H-mask corresponding to the target pattern; defining an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask having a width which is less than a predetermined critical width; identifying vertical critical features in the V-mask having a width which is less than a predetermined critical width; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask. The non-critical features are those features having a width which is greater than or equal to the predetermined critical width. The non-critical features are formed in the H-mask and the V-mask utilizing chrome. The target pattern is then imaged on the substrate by imaging both the H-mask and V-mask.

摘要翻译： 基于具有要在多曝光光刻成像处理中使用的基板上成像的特征的目标图案产生互补掩模的方法。 该方法包括以下步骤：定义对应于目标图案的初始H掩码; 定义对应于目标图案的初始V掩模; 识别具有小于预定临界宽度的宽度的H掩模中的水平临界特征; 识别具有小于预定临界宽度的宽度的V形掩模中的垂直关键特征; 将第一相移和第一百分比传输分配给​​要在H掩模中形成的水​​平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。 该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。 非关键特征是具有大于或等于预定临界宽度的宽度的那些特征。 非关键特征形成在H掩模和使用铬的V形掩模中。 然后通过成像H掩模和V掩模来将目标图案成像在衬底上。

公开(公告)号：US06792591B2

公开(公告)日：2004-09-14

申请号：US10083683

申请日：2002-02-27

申请人： Xuelong Shi ,  Jang Fung Chen ,  Duan-Fu Stephen Hsu

发明人： Xuelong Shi ,  Jang Fung Chen ,  Duan-Fu Stephen Hsu

IPC分类号： G06F1750

CPC分类号： G03F7/705 ,  G03F7/70125 ,  G03F7/70433 ,  G03F7/70441

摘要： Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.

摘要翻译： 光学邻近效应（OPE）在光刻中是众所周知的现象。 OPE由主要特征和相邻特征之间的结构相互作用产生。 本发明人已经确定，这种结构相互作用不仅影响主要特征在图像平面上的临界尺寸，而且还影响主要特征的工艺纬度。 此外，已经确定临界尺寸的变化以及主要特征的过程纬度是主要特征和相邻特征之间的光场干扰的直接后果。 根据相邻特征产生的场的相位，主要特征临界尺寸和工艺纬度可以通过建设性的光场干涉来改善，或者由于破坏性的光场干扰而降低。 由相邻特征产生的场的相位取决于俯仰以及照明角度。 对于给定的照明，禁止的音调区域是相邻特征产生的场相当地干扰主要特征的场的位置。 本发明提供一种用于确定和消除任何特征尺寸和照明条件的禁止间距区域的方法。 此外，它提供了一种用于执行照明设计以便抑制禁止音调现象以及用于散射棒辅助特征的最佳布置的方法。

公开(公告)号：US20130055171A1

公开(公告)日：2013-02-28

申请号：US13401820

申请日：2012-02-21

申请人： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke

发明人： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/144 ,  G03F1/70 ,  G03F7/70466 ,  G06F2217/08 ,  G06F2217/12

摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.

摘要翻译： 公开了一种基于具有待成像在基板上的特征的目标图案产生互补掩模以在多次曝光光刻成像过程中使用的方法。 该方法包括定义对应于目标图案的初始H掩模和初始V掩模; 识别V面罩中H面罩和垂直关键特征的水平关键特征; 将第一相移和第一百分比传输分配给​​要在H掩模中形成的水​​平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。 该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。

公开(公告)号：US20120208113A1

公开(公告)日：2012-08-16

申请号：US13455103

申请日：2012-04-24

申请人： Duan-Fu Stephen Hsu ,  JooByoung Kim

发明人： Duan-Fu Stephen Hsu ,  JooByoung Kim

IPC分类号： G03F7/20 ,  G03F1/68 ,  G03F1/00

CPC分类号： G03F7/70466 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70441

摘要： A method of splitting a lithographic pattern into two sub-patterns, includes generating test structures corresponding to structures of interest in the lithographic pattern, varying the test structures through a selected range of dimensions, simulating an image of the test structures, determining an image quality metric for the simulated image, analyzing the determined image quality metric to determine pitch ranges for which split improves the image quality metric and ranges for which split does not improve the image quality metric, and generating the two sub-patterns in accordance with the determined pitch ranges.

摘要翻译： 将光刻图案分割为两个子图案的方法包括产生对应于光刻图案中感兴趣的结构的测试结构，通过选择的尺寸范围改变测试结构，模拟测试结构的图像，确定图像质量 测量模拟图像，分析所确定的图像质量度量以确定分割的音调范围改善图像质量度量和分割的范围不改善图像质量度量，并且根据确定的音调生成两个子模式 范围。

公开(公告)号：US20110236808A1

公开(公告)日：2011-09-29

申请号：US13155259

申请日：2011-06-07

申请人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.