Enhanced non-noble electrode layers for DRAM capacitor cell

Invention Grant

US08647943B2 Enhanced non-noble electrode layers for DRAM capacitor cell 有权

Title translation: 用于DRAM电容器电池的增强型非贵金属电极层

Please log in to see more content

Patent Title: Enhanced non-noble electrode layers for DRAM capacitor cell
Patent Title (中): 用于DRAM电容器电池的增强型非贵金属电极层
Application No.: US13494693

Application Date: 2012-06-12
Publication No.: US08647943B2

Publication Date: 2014-02-11
Inventor: Hanhong Chen , Wim Y. Deweerd , Edward L Haywood , Sandra G Malhotra , Hiroyuki Ode
Applicant: Hanhong Chen , Wim Y. Deweerd , Edward L Haywood , Sandra G Malhotra , Hiroyuki Ode
Applicant Address: US CA San Jose JP Tokyo
Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
Current Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
Current Assignee Address: US CA San Jose JP Tokyo
Main IPC: H01L21/8242
IPC: H01L21/8242

Enhanced non-noble electrode layers for DRAM capacitor cell

Abstract:

A metal oxide first electrode material for a MIM DRAM capacitor is formed wherein the first and/or second electrode materials or structures contain layers having one or more dopants up to a total doping concentration that will not prevent the electrode materials from crystallizing during a subsequent anneal step. Advantageously, the electrode doped with one or more of the dopants has a work function greater than about 5.0 eV. Advantageously, the electrode doped with one or more of the dopants has a resistivity less than about 1000 μΩ cm. Advantageously, the electrode materials are conductive molybdenum oxide.

Abstract(Chinese):

形成用于MIM DRAM电容器的金属氧化物第一电极材料，其中第一和/或第二电极材料或结构包含具有一个或多个掺杂剂的层，直到总掺杂浓度，其将不会阻止电极材料在随后的退火期间结晶步。有利地，掺杂有一种或多种掺杂剂的电极具有大于约5.0eV的功函数。有利地，掺杂有一种或多种掺杂剂的电极具有小于约1000μΩmΩ的电阻率。有利地，电极材料是导电性氧化钼。

Public/Granted literature

US20130330902A1 ENHANCED NON-NOBLE ELECTRODE LAYERS FOR DRAM CAPACITOR CELL Public/Granted day:2013-12-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）