Invention Grant
- Patent Title: Self-formed nanometer channel at wafer scale
- Patent Title (中): 硅片自制纳米通道
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Application No.: US13971468Application Date: 2013-08-20
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Publication No.: US08652337B1Publication Date: 2014-02-18
- Inventor: Ali Afzali-Ardakani , Binquan Luan , Gustavo A. Stolovitzky , Chao Wang , Deqiang Wang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01B13/00
- IPC: H01B13/00

Abstract:
A mechanism is provided for fabricating nanochannels for a nanodevice. Insulating film is deposited on a substrate. A nanowire is patterned on the film. Insulating material is deposited on the nanowire and film. A first circular hole is formed in the insulating material as an inlet, over a first tip of the nanowire to expose the first tip. A second circular hole is formed as an outlet, over a second tip of the nanowire opposite the first tip to expose the second tip. A nanochannel connects the first and second holes by etching away the nanowire via an etchant in the first and the second holes. A first reservoir is attached over the first hole in connection with the nanochannel at a previous location of the first tip. A second reservoir is attached over the second hole in connection with the nanochannel at a previous location of the second tip.
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