发明授权
- 专利标题： Electrical switch using gated resistor structures and three-dimensional integrated circuits using the same
- 专利标题（中）： 使用门控电阻结构的电气开关和使用其的三维集成电路
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申请号： US13226218申请日： 2011-09-06
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公开(公告)号： US08653598B2公开(公告)日： 2014-02-18
- 发明人: Shu-Lu Chen
- 申请人： Shu-Lu Chen
- 代理机构： HDLS IPR Services
- 代理商 Chun-Ming Shih
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L29/76 ; H01L23/62 ; H01L27/11 ; H01L21/70 ; H01L29/00
摘要：
An electrical switch using a gated resistor structure includes an isolation layer, a doped silicon layer arranged on the isolation layer and having a recessed portion with reduced thickness, the doped silicon layer having a predetermined doping type and a predetermined doping profile; a gate layer arranged corresponding to the recessed portion. The recessed portion in the doped silicon layer has such thickness that a channel defined under the gate can be fully depleted to form a high resistivity region. The recessed channel gated resistor structure can be advantageously used to achieve high interconnect density with low thermal budget for 3D integration.
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