发明授权
- 专利标题: System and method for combined intraoverlay metrology and defect inspection
- 专利标题(中): 组合内部测量和缺陷检查的系统和方法
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申请号: US13464116申请日: 2012-05-04
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公开(公告)号: US08656318B2公开(公告)日: 2014-02-18
- 发明人: Hsin-Chang Lee , Chia-Jen Chen , Yeh Lee-Chih , Sheng-Chi Chin , Ting-Hao Hsu , Anthony Yen
- 申请人: Hsin-Chang Lee , Chia-Jen Chen , Yeh Lee-Chih , Sheng-Chi Chin , Ting-Hao Hsu , Anthony Yen
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
A method and system for measuring layer overlay and for inspecting a mask for defects unrelated to overlay utilizing a singe comprehensive tool is disclosed. An exemplary method includes receiving a mask design database that corresponds to a mask and has a die area with a mask database feature. A mask image of the mask is received, and a comprehensive inspection system compares the mask image to the mask design database in order to detect mask defects that are not related to layer alignment. The system produces mask defect information corresponding to the mask defects. The comprehensive inspection system also compares the mask image to the mask design database to determine a database-to-mask offset. From the database-to-mask offset, a mask overlay characteristic is determined.
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