Invention Grant
- Patent Title: Memory cell supply voltage control based on error detection
- Patent Title (中): 基于错误检测的存储单元电源电压控制
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Application No.: US13215949Application Date: 2011-08-23
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Publication No.: US08667367B2Publication Date: 2014-03-04
- Inventor: Muhammad Khellah , Dinesh Somasekhar , Yibin Ye , Nam Sung Kim , Vivek De
- Applicant: Muhammad Khellah , Dinesh Somasekhar , Yibin Ye , Nam Sung Kim , Vivek De
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
Described herein is an apparatus for adjusting a power supply level for a memory cell to improve stability of a memory unit. The apparatus comprises memory circuitry including memory cells, error detection circuitry to detect error in data stored by memory cells of the memory circuitry, and supply voltage control circuitry to increase supply voltage for one or more memory cells of the memory circuitry based at least in part on detected error.
Public/Granted literature
- US20110307761A1 MEMORY CELL SUPPLY VOLTAGE CONTROL BASED ON ERROR DETECTION Public/Granted day:2011-12-15
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