Invention Grant
US08668956B2 Vapor deposition particle emitting device, vapor deposition apparatus, vapor deposition method
有权
气相沉积粒子发射装置,气相沉积装置,气相沉积法
- Patent Title: Vapor deposition particle emitting device, vapor deposition apparatus, vapor deposition method
- Patent Title (中): 气相沉积粒子发射装置,气相沉积装置,气相沉积法
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Application No.: US13985281Application Date: 2012-03-07
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Publication No.: US08668956B2Publication Date: 2014-03-11
- Inventor: Satoshi Inoue , Shinichi Kawato , Tohru Sonoda , Satoshi Hashimoto
- Applicant: Satoshi Inoue , Shinichi Kawato , Tohru Sonoda , Satoshi Hashimoto
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Morrison & Foerster LLP
- Priority: JP2011-055962 20110314
- International Application: PCT/JP2012/055803 WO 20120307
- International Announcement: WO2012/124654 WO 20120920
- Main IPC: C23C16/448
- IPC: C23C16/448 ; C23C14/26

Abstract:
A vapor deposition particle injection device (30) includes a vapor deposition particle generating section (41), at least one nozzle stage made of an intermediate nozzle section (51), a vapor deposition particle emitting nozzle section (61), and heat exchangers (43, 63, 53). The vapor deposition particle emitting nozzle section (61) is controlled so as to be at a temperature lower than a temperature at which a vapor deposition material turns into gas. Meanwhile, the intermediate nozzle section (51) is controlled by the heat exchanger (53) so as to be at a temperature between a temperature of the vapor deposition particle generating section (41) and a temperature of the vapor deposition particle emitting nozzle section (61).
Public/Granted literature
- US20130323882A1 VAPOR DEPOSITION PARTICLE EMITTING DEVICE, VAPOR DEPOSITION APPARATUS, VAPOR DEPOSITION METHOD Public/Granted day:2013-12-05
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