公开(公告)号：US08845808B2

公开(公告)日：2014-09-30

申请号：US13997173

申请日：2011-12-19

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: C23C14/26 ,  C23C16/448 ,  H05B33/10 ,  C23C14/24 ,  H01L21/02 ,  H01L51/00 ,  H01L51/56

CPC classification number: C23C16/45578 ,  C23C14/24 ,  C23C14/243 ,  H01L21/02263 ,  H01L51/001 ,  H01L51/56 ,  H05B33/10

Abstract: A vapor deposition device (50) in accordance with the present invention is a vapor deposition device for forming a film on a film formation substrate (60), the vapor deposition device including a vapor deposition source (80) that has an injection hole (81) from which vapor deposition particles are injected, a vapor deposition particle crucible (82) for supplying the vapor deposition particles to the vapor deposition source (80), and a rotation motor (86) for changing a distribution of the injection amount of the vapor deposition particles by rotating the vapor deposition source (80).

Abstract translation: 根据本发明的蒸镀装置（50）是在成膜基板（60）上形成膜的蒸镀装置，其特征在于，所述蒸镀装置具有：蒸镀源（80），具有喷射孔 ），用于将气相沉积粒子供给到气相沉积源（80）的气相沉积粒子坩埚（82）和用于改变蒸汽喷射量分布的旋转马达（86） 通过旋转气相沉积源（80）来沉积颗粒。

公开(公告)号：US08842978B2

公开(公告)日：2014-09-23

申请号：US13425529

申请日：2012-03-21

Applicant: Satoshi Hashimoto ,  Masahiro Oashi ,  Tomoyuki Okada ,  Hiroshi Yahata

Inventor： Satoshi Hashimoto ,  Masahiro Oashi ,  Tomoyuki Okada ,  Hiroshi Yahata

IPC: H04N5/92 ,  G11B27/32 ,  G11B19/02 ,  G11B27/34 ,  G11B27/10 ,  G11B27/034

CPC classification number: G11B27/329 ,  G11B19/025 ,  G11B27/034 ,  G11B27/105 ,  G11B27/34 ,  G11B2220/213 ,  G11B2220/2541

Abstract: A playback apparatus and method that executes an application while playing back a digital stream. A mixer is configured to, when a flag included in a playlist is set to ON, mix an output of a click sound using sound data with an audio output of the digital stream when a user performs an operation on an application while the application is executed. When the flag is set to OFF, the mixer refrains from mixing the output of the click sound with the audio output.

Abstract translation: 一种在播放数字流时执行应用的播放装置和方法。 混合器被配置为当包括在播放列表中的标志被设置为ON时，当用户在执行应用程序时执行对应用的操作时，使用声音数据与数字流的音频输出混合输出的点击声音 。 当标志设置为OFF时，混音器不会将点击声音的输出与音频输出混合。

公开(公告)号：US08694174B2

公开(公告)日：2014-04-08

申请号：US13122528

申请日：2009-10-06

Applicant: Atsushi Nishino ,  Satoshi Hashimoto

Inventor： Atsushi Nishino ,  Satoshi Hashimoto

IPC: G05B1/01

CPC classification number: F24F11/70 ,  F24F11/46 ,  F24F11/47 ,  F24F2140/60

Abstract: An energy saving support device supports energy saving of an air conditioner and includes an acquiring unit, a first energy calculating unit, a second energy calculating unit, an information generating unit and a reporting unit. The acquiring unit acquires operating data regarding the air conditioner. The first energy calculating unit determines a total consumed energy or a standard consumed energy of the air conditioner as a comparison target energy based on the operating data acquired by the acquiring unit. The second energy calculating unit determines a low-COP consumed energy based on the operating data acquired by the acquiring unit. The information generating unit generates room-for-energy-saving information in order to determine a potential for energy saving based on the comparison target energy and the low-COP consumed energy. The reporting unit reports the room-for-energy-saving information.

Abstract translation: 节能支持装置支持空调的节能，包括获取单元，第一能量计算单元，第二能量计算单元，信息生成单元和报告单元。 获取单元获取关于空调的操作数据。 第一能量计算单元基于由获取单元获取的操作数据，确定空调的总消耗能量或标准消耗能量作为比较目标能量。 第二能量计算单元基于由获取单元获取的操作数据来确定低COP消耗能量。 信息生成单元基于比较对象能量和低COP消耗能量，生成节能信息，以确定节能的可能性。 报告单位报告节能信息。

公开(公告)号：US08670871B2

公开(公告)日：2014-03-11

申请号：US13139752

申请日：2009-12-21

Applicant: Atsushi Nishino ,  Satoshi Hashimoto

Inventor： Atsushi Nishino ,  Satoshi Hashimoto

IPC: G01M1/38 ,  G05B13/00 ,  G05B15/00 ,  G05D23/00 ,  F28F13/00

CPC classification number: F24F11/30 ,  F24F11/46 ,  F24F11/54 ,  F24F11/62

Abstract: A load processing balance setting apparatus includes first and second air-conditioners for targeted first and second areas, a calculating unit, a determining unit and an adjusting unit. The first area is included within the second area. The calculating unit calculates a sum of an air-conditioning load for the first and second air-conditioners. Preferably, the determining unit determines a first and second processing throughputs for the first and second air-conditioners so that a COP (Coefficient of Performance) for the sum of the air-conditioning loads calculated by the calculating unit is maximized or is equal to or greater than a predetermined level, or so that a power consumption level for the sum of the air-conditioning loads calculated by the calculating unit is minimized or is equal to or less than a predetermined level. The adjusting unit controls the first and second air-conditioners based on the first and second processing throughputs.

Abstract translation: 负载处理平衡设定装置包括用于目标的第一和第二区域的第一和第二空调器，计算单元，确定单元和调整单元。 第一个区域包括在第二个区域内。 计算单元计算第一和第二空调的空调负荷的总和。 优选地，确定单元确定第一和第二空调的第一和第二处理吞吐量，使得由计算单元计算的空调负载之和的COP（性能的系数）最大化或等于或等于 大于预定水平，或者使得由计算单元计算的空调负载之和的功率消耗水平被最小化或者等于或小于预定水平。 调整单元基于第一和第二处理吞吐量来控制第一和第二空调。

公开(公告)号：US20140014036A1

公开(公告)日：2014-01-16

申请号：US14007956

申请日：2012-03-23

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H01L21/02 ,  B65D85/00

Abstract: A vapor deposition particle emitting device of the present invention includes: a nozzle section (110) having emission holes (111) from which gaseous vapor deposition particles are emitted out; a heating plate unit (100), provided in the nozzle section (110), which is made up of heating plates (101) each having a surface on which a vapor deposition material remains as a result of adherence of vapor deposition particles to the surface; and a heating device (160) for heating the vapor deposition material, which is thus remaining on the surface of each of the heating plates (101), so that a temperature of the vapor deposition material is not less than a temperature at which to become transformed into gaseous form.

Abstract translation: 本发明的气相沉积粒子发射装置包括：喷嘴部分（110），其具有从其中排出气态气相沉积颗粒的发射孔（111）; 设置在所述喷嘴部分（110）中的加热板单元（100），所述加热板单元由加热板（101）组成，所述加热板具有由于气相沉积颗粒粘附到所述表面而具有气相沉积材料的表面的表面 ; 以及用于加热蒸镀材料的加热装置（160），其被保持在每个加热板（101）的表面上，使得蒸镀材料的温度不低于成为 转化成气态。

公开(公告)号：US20130319331A1

公开(公告)日：2013-12-05

申请号：US13985854

申请日：2012-03-08

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H01L51/56

CPC classification number: H01L51/56 ,  C23C14/243 ,  C23C14/26 ,  C23C14/542 ,  C23C14/562 ,  H01L51/0008

Abstract: A vapor deposition particle injection device (501) of the present invention includes: vapor deposition particle generating sections (110) and (120) for generating vapor deposition particles in the form of vapor by heating vapor deposition materials (114) and (124); and a nozzle section (170) which (i) is connected to the vapor deposition particle generating sections (110) and (120) and (ii) has an injection hole (171) from which the vapor deposition particles generated by the vapor deposition particle generating sections (110) and (120) are injected outward. The vapor deposition particle generating section (120) has a smaller capacity for the vapor deposition material than the vapor deposition particle generating section (110).

Abstract translation: 本发明的气相沉积粒子注入装置（501）包括：通过加热气相沉积材料（114）和（124）产生汽相形式的气相沉积颗粒的气相沉积颗粒产生部分（110）和（120） 和（i）连接到气相沉积颗粒产生部分（110）和（120）的喷嘴部分（170）和（ii）具有喷射孔（171），由气相沉积颗粒产生的气相沉积颗粒 产生部分（110）和（120）向外注入。 气相沉积粒子产生部分（120）具有比气相沉积粒子产生部分（110）更小的气相沉积材料的能力。

公开(公告)号：US20130302572A1

公开(公告)日：2013-11-14

申请号：US13980571

申请日：2012-01-13

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H05B33/14

CPC classification number: H05B33/145 ,  C23C14/042 ,  C23C14/54 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/0002 ,  H01L51/56 ,  H01L2251/558 ,  Y10T428/24612

Abstract: A film formation substrate (200) is arranged such that (i) a base end, in a y-axis direction, of a film-thickness-gradually-diminishing part (23sR) of a first film (23R) overlaps a first film formation region (24R), and (ii) a film-thickness-gradually-diminishing part (23sB) of a second film (23B) is disposed on an outside, in the y-axis direction, of a second film formation region (24B) and overlaps the film-thickness-gradually-diminishing part (23sR) of the first film (23R) so as to compensate for a gradually diminished thickness of the film-thickness-gradually-diminishing part (23sR).

Abstract translation: 成膜基板（200）配置成：（i）第一膜（23R）的膜厚逐渐减小部（23sR）的y轴方向的基端与第一膜形成物 区域（24R），和（ii）第二膜形成区域（24B）的y轴方向的外侧设置第二膜（23B）的膜厚逐渐减小部分（23sB） 并且与第一膜（23R）的膜厚逐渐减小部分（23sR）重叠，以补偿膜厚逐渐减小部分（23sR）的逐渐减小的厚度。

公开(公告)号：US20130292501A1

公开(公告)日：2013-11-07

申请号：US13996515

申请日：2011-12-16

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: B03C1/005

CPC classification number: B03C1/005 ,  B03C1/30 ,  B03C2201/20 ,  C23C14/12 ,  C23C14/564 ,  H01L51/0016

Abstract: A layer (71), made from a material that is attracted by a magnet, is formed in at least part of a chamber component (70), which at least part makes in contact with a film forming material. A method for collecting a film forming material includes the steps of: (a) exfoliating an attachment (22) which has attached to a surface of the chamber component (70); and (b) collecting the attachment (22) by separating a fragment of the layer (71), which fragment has been exfoliated in the step (a), while causing the fragment to be attracted by a magnet (202a).

Abstract translation: 在由至少部分与成膜材料接触的室部件（70）的至少一部分中形成由被磁体吸引的材料制成的层（71）。 收集成膜材料的方法包括以下步骤：（a）剥离附着在室部件（70）的表面上的附件（22）; 和（b）通过在片段被磁体（202a）吸引的同时分离在步骤（a）中剥离的片段的片段（71）来收集附件（22）。

公开(公告)号：US20130273679A1

公开(公告)日：2013-10-17

申请号：US13976011

申请日：2011-12-20

Applicant: Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

Inventor： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC: H01L51/00

CPC classification number: H01L51/0011 ,  C23C14/042 ,  C23C14/12 ,  H01L51/0008

Abstract: A vapor deposition method of the present invention includes the steps of (i) preparing a mask unit including a shadow mask (81) and a vapor deposition source (85) fixed in position relative to each other, (ii) while moving at least one of the mask unit and the film formation substrate (200) relative to the other, depositing a vapor deposition flow, emitted from the vapor deposition source (85), onto a vapor deposition region (210), and (iii) adjusting the position of a second shutter (111) so that the second shutter (111) blocks a vapor deposition flow traveling toward the vapor deposition unnecessary region (210).

Abstract translation: 本发明的气相沉积方法包括以下步骤：（i）制备掩模单元，其包括荫罩（81）和相对于彼此固定的位置的气相沉积源（85），（ii）在移动至少一个 的掩模单元和成膜基板（200）相对于另一方形成，从蒸镀源（85）排出的气相沉积流沉积在蒸镀区域（210）上，（iii） 第二挡板（111），使得所述第二挡板（111）阻挡向所述气相沉积不需要区域（210）行进的气相沉积流。

公开(公告)号：US08171768B2

公开(公告)日：2012-05-08

申请号：US12091696

申请日：2006-10-31

Applicant: Hiroshi Ueno ,  Satoshi Hashimoto ,  Alexei Vinogradov

Inventor： Hiroshi Ueno ,  Satoshi Hashimoto ,  Alexei Vinogradov

IPC: B21C23/00 ,  B21C23/01 ,  B21D22/00

CPC classification number: B21C23/01 ,  B21C23/001 ,  B21C25/08

Abstract: After a rod-like titanium material 20 is accommodated in a generally linear-shaped groove 13 of a first mold 7, a first guide portion 15 of a second mold 8 is fitted to the groove 13. Thereafter, the first mold 7 is moved along an arrow A direction relative to the second mold 8 fixed to an anchor block, by which the titanium material 20 substantially immovably retained in the groove 13 of the first mold 7 is bent and pushed into a through hole 24 of the second mold 8 by the first guide portion 15, thus being plastically deformed.

Abstract translation: 在棒状钛材料20容纳在第一模具7的大致直线状的槽13中之后，第二模具8的第一引导部分15装配到槽13中。之后，第一模具7沿着 箭头A相对于固定到锚固块的第二模具8的方向，钛基材20基本上不可移动地保持在第一模具7的槽13中，被弯曲并被推入第二模具8的通孔24中 第一引导部15，因此塑性变形。