发明授权
- 专利标题： Methods of making crystalline tantalum pentoxide
- 专利标题（中）： 制造结晶五氧化钽的方法
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申请号： US13614854申请日： 2012-09-13
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公开(公告)号： US08673390B2公开(公告)日： 2014-03-18
- 发明人: Vishwanath Bhat , Rishikesh Krishnan , Daniel F. Gealy
- 申请人： Vishwanath Bhat , Rishikesh Krishnan , Daniel F. Gealy
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： B05D5/12
- IPC分类号： B05D5/12 ; B05D3/00 ; C23C16/00
摘要：
There is disclosed a method of forming crystalline tantalum pentoxide on a ruthenium-containing material having an oxygen-containing surface wherein the oxygen-containing surface is contacted with a treating composition, such as water, to remove at least some oxygen. Crystalline tantalum pentoxide is formed on at least a portion of the surface having reduced oxygen content.
公开/授权文献
- US20130011990A1 Methods of Making Crystalline Tantalum Pentoxide 公开/授权日：2013-01-10