发明授权
- 专利标题： Semiconductor structure having NFET extension last implants
- 专利标题（中）： 具有NFET延伸最后植入物的半导体结构
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申请号： US13551054申请日： 2012-07-17
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公开(公告)号： US08673699B2公开(公告)日： 2014-03-18
- 发明人: Thomas N. Adam , Kangguo Cheng , Bruce B. Doris , Bala S. Haran , Pranita Kulkarni , Amlan Majumdar , Stefan Schmitz
- 申请人： Thomas N. Adam , Kangguo Cheng , Bruce B. Doris , Bala S. Haran , Pranita Kulkarni , Amlan Majumdar , Stefan Schmitz
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Law Offices of Ira D. Blecker, P.C.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of forming a semiconductor structure which includes an extremely thin silicon-on-insulator (ETSOI) semiconductor structure having a PFET portion and an NFET portion, a gate structure in the PFET portion and the NFET portion, a high quality nitride spacer adjacent to the gate structures in the PFET portion and the NFET portion and a doped faceted epitaxial silicon germanium raised source/drain (RSD) in the PFET portion. An amorphous silicon layer is formed on the RSD in the PFET portion. A faceted epitaxial silicon RSD is formed on the ETSOI adjacent to the high quality nitride in the NFET portion. The amorphous layer in the PFET portion prevents epitaxial growth in the PFET portion during formation of the RSD in the NFET portion. Extensions are ion implanted into the ETSOI underneath the gate structure in the NFET portion.
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