发明授权
US08674448B2 Trigate static random-access memory with independent source and drain engineering, and devices made therefrom
有权
调整静态随机存取存储器，具有独立的源和漏极工程，以及由此制造的器件
- 专利标题： Trigate static random-access memory with independent source and drain engineering, and devices made therefrom
- 专利标题（中）： 调整静态随机存取存储器，具有独立的源和漏极工程，以及由此制造的器件
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申请号： US13563432申请日： 2012-07-31
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公开(公告)号： US08674448B2公开(公告)日： 2014-03-18
- 发明人: Ravi Pillarisetty , Willy Rachmady , Brian S. Doyle , Robert S. Chau
- 申请人： Ravi Pillarisetty , Willy Rachmady , Brian S. Doyle , Robert S. Chau
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Winkle, PLLC
- 主分类号： H01L21/70
- IPC分类号： H01L21/70
摘要：
A static random-access memory circuit includes at least one access device including source and drain sections for a pass region, at least one pull-up device and at least one pull-down device including source-and-drain sections for a pull-down region. The static random-access memory circuit is configured with external resistivity (Rext) for the pull-down region to be lower than Rext for the pass region. Processes of achieving the static random-access memory circuit include source-and-drain epitaxy.
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