Invention Grant
- Patent Title: Direct growth of graphene on substrates
- Patent Title (中): 石墨烯在基材上的直接生长
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Application No.: US13346152Application Date: 2012-01-09
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Publication No.: US08685843B2Publication Date: 2014-04-01
- Inventor: Lain-Jong Li , Ching-Yuan Su , Ang-Yu Lu , Chih-Yu Wu , Keng-Ku Liu
- Applicant: Lain-Jong Li , Ching-Yuan Su , Ang-Yu Lu , Chih-Yu Wu , Keng-Ku Liu
- Applicant Address: TW Taipei
- Assignee: Academia Sinica
- Current Assignee: Academia Sinica
- Current Assignee Address: TW Taipei
- Agency: Fish & Richardson P.C.
- Priority: CN201110189082 20110701
- Main IPC: H01L21/04
- IPC: H01L21/04
Abstract:
Graphene layers can be formed on a dielectric substrate using a process that includes forming a copper thin film on a dielectric substrate; diffusing carbon atoms through the copper thin film; and forming a graphene layer at an interface between the copper thin film and the dielectric substrate.
Public/Granted literature
- US20130001515A1 DIRECT GROWTH OF GRAPHENE ON SUBSTRATES Public/Granted day:2013-01-03
Information query
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