Invention Grant
- Patent Title: Ground contact structure for a low dark current CMOS pixel cell
- Patent Title (中): 低电流CMOS像素单元的接地结构
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Application No.: US13558231Application Date: 2012-07-25
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Publication No.: US08686477B2Publication Date: 2014-04-01
- Inventor: Sohei Manabe , Jeong-Ho Lyu
- Applicant: Sohei Manabe , Jeong-Ho Lyu
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L29/768 ; H01L31/062 ; H01L31/113 ; H01L27/146

Abstract:
Pixel array structures to provide a ground contact for a CMOS pixel cell. In an embodiment, an active area of a pixel cell includes a photodiode disposed in a first portion of an active area, where a second portion of the active area extends from a side of the first portion. The second portion includes a doped region to provide a ground contact for the active area. In another embodiment, the pixel cell includes a transistor to transfer the charge from the photodiode, where a gate of the transistor is adjacent to the second portion and overlaps the side of the first portion.
Public/Granted literature
- US20140027827A1 GROUND CONTACT STRUCTURE FOR A LOW DARK CURRENT CMOS PIXEL CELL Public/Granted day:2014-01-30
Information query
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