Invention Grant
US08686477B2 Ground contact structure for a low dark current CMOS pixel cell 有权
低电流CMOS像素单元的接地结构

Ground contact structure for a low dark current CMOS pixel cell
Abstract:
Pixel array structures to provide a ground contact for a CMOS pixel cell. In an embodiment, an active area of a pixel cell includes a photodiode disposed in a first portion of an active area, where a second portion of the active area extends from a side of the first portion. The second portion includes a doped region to provide a ground contact for the active area. In another embodiment, the pixel cell includes a transistor to transfer the charge from the photodiode, where a gate of the transistor is adjacent to the second portion and overlaps the side of the first portion.
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